Coulomb drag in metal monochalcogenides double-layer structures with Mexican-hat band dispersions

摘要

We theoretically study the Coulomb drag resistivity and plasmon modes behavior for a system composed of two parallel p-type doped GaS monolayers with Mexican-hat valence energy band using the Boltzmann transport theory formalism. We investigate the effect of temperature, T, carrier density, p, and layer separation, d, on the plasmon modes and drag resistivity within the energy-independent scattering time approximation. Our results show that the density dependence of plasmon modes can be approximated by p (0.5). Also, the calculations suggest a d (0.2) and a d (0.1) dependencies for the acoustic and optical plasmon energies, respectively. Interestingly, we obtain that the behavior of drag resistivity in the double-layer metal monochalcogenides swings between the behavior of a double-quantum well system with parabolic dispersion and that of a double-quantum wire structure with a large carrier density of states. In particular, the transresistivity value reduces exponentially with increasing the distance between layers. Furthermore, the drag resistivity changes as T (2)/p (4) (T (2.8)/p (4.5)) at low (intermediate) temperatures. Finally, we compare the drag resistivity as a function of temperature for GaS with other Mexican-hat materials including GaSe and InSe and find that it adopts higher values when the metal monochalcogenide has smaller Mexican-hat height.