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机译:局部应变能量来预测III-V伪系数的准确相图的影响:GA(AS,SB)和(IN,GA)的情况
Korea Inst Sci &
Technol Ctr Elect Mat Seoul 02792 South Korea;
Korea Inst Sci &
Technol Ctr Elect Mat Seoul 02792 South Korea;
Korea Inst Sci &
Technol Ctr Elect Mat Seoul 02792 South Korea;
Korea Inst Sci &
Technol Ctr Elect Mat Seoul 02792 South Korea;
Indo Korea Sci &
Technol Ctr Bengaluru 560065 India;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 08826 South Korea;
Korea Inst Sci &
Technol Ctr Elect Mat Seoul 02792 South Korea;
phase diagram; IIIamp; 8211; V pseudobinary systems; strain energy by local compositional fluctuation; configuration-dependent energy; ab initio thermodynamics;
机译:Ga-Bi-Sb系统Bi-Ga_(10)Sb_(90)区合金的相图研究与表征
机译:Ga-As-Sb系统的低温相图和(100)InAs衬底上晶格匹配的GaAsSb的液相外延生长
机译:通过全局从头开始预测Al-Ga-In-As系统,MAs-M'As(M,M'。=。Al,Ga或In)和AlAs-GaAs-InAs系统中的低温相图能源景观研究
机译:三元GA-NI-SB相图的实验研究
机译:MBE研究超长波长红外光电探测器InAs / Ga(In)Sb和InAsN / Ga(In)Sb超晶格
机译:硅和基本掺杂元素(AlAsBBiGaInNPSb和Tl)的二元相图和热力学性质
机译:在Zintl相位晶体和电子结构中应用Zintl阶段晶体结构的新见解,Ba7Ga4P9,Ba7Ga4As9,Ba7Al4SB9,Ba6caal4SB9和Ba6caga4SB9
机译:HgTe -ZnTe的相图pseudobinary和密度,热容量和Hg(亚1x)Zn(亚x)Te pseudobinary熔体混合的焓