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Electro-optic modulation in a non-centrosymmetric antiferroelectric crystal

机译:非亚里索对称防废液晶体中的电光调制

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摘要

Electro-optic (EO) materials play a unique and crucial role in modern optical communication and laser science. However, EO materials with large EO coefficient are usually accompanied by serious piezoelectric ringing, which plays an important role in limiting their applications in high frequency and high voltage devices. It is difficult to find a balance between EO coefficient and piezoelectric coefficient. In this paper, we report a new EO crystal, K3Nb3B2O12 (KNBO), acquired from a non-centrosymmetric antiferroelectric (AFE) material. Its EO coefficient is determined to be 3.3 pm V-1, which is comparable with the performance of the commercial EO crystals BBO (2.5 pm V-1) and LGS (2.3 pm V-1). The KNBO crystal exhibits high transmittance (nearly 80%) and a wide optical transparency range (from 327 nm to 4.67 mu m). Moreover, the KNBO crystal could effectively avoid piezoelectric ringing, due to a negligible piezoelectric coefficient. These balanced properties of the KNBO crystal favor potential EO applications. More importantly, this is the first demonstration of linear EO modulation in an AFE crystal. This work opens the door for the exploration of AFEs as potential EO materials, which simultaneously possess large EO coefficients and overcome piezoelectric ringing.
机译:电光材料在现代光通信和激光科学中发挥着独特而关键的作用。然而,大电光系数的电光材料通常伴随着严重的压电环效应,这对其在高频高压器件中的应用起着重要的限制作用。很难在EO系数和压电系数之间找到平衡。本文报道了一种新的电光晶体K3Nb3B2O12(KNBO),它是从非中心对称反铁电材料(AFE)中获得的。其EO系数被确定为3.3 pm V-1,这与商业EO晶体BBO(2.5 pm V-1)和LGS(2.3 pm V-1)的性能相当。KNBO晶体具有高透射率(近80%)和宽的光学透明范围(从327 nm到4.67μm)。此外,KNBO晶体的压电系数可以忽略不计,因此可以有效地避免压电振铃。KNBO晶体的这些平衡性质有利于潜在的EO应用。更重要的是,这是AFE晶体中线性电光调制的首次演示。这项工作为AFEs作为潜在的EO材料的探索打开了大门,它同时具有大的EO系数和克服压电振铃。

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    Chinese Acad Sci Fujian Inst Res Struct Matter Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Henan Univ Engn Henan Key Lab Elect Ceram Mat &

    Applicat Zhengzhou 451191 Henan Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
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