首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Overcoming the conductivity limit of insulator through tunneling-current junction welding: Ag@PVP core-shell nanowire for high-performance transparent electrode
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Overcoming the conductivity limit of insulator through tunneling-current junction welding: Ag@PVP core-shell nanowire for high-performance transparent electrode

机译:通过隧道电流结焊克服绝缘体的电导率极限:AG @ PVP芯壳纳米线,用于高性能透明电极

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摘要

Core-shell structure can endow silver nanowire (AgNW) with excellent stability. However, its application is greatly hindered by non-industrial preparation process and bad dispersity of the present passivation shell layer. Polymer shell material can solve these problems but no researchers have adopted because apart from removing the polymer, there is no method which can overcome the conductivity limit of the insulating polymer at present. Herein, inspired by the tunnel effect of scanning tunneling microscope, we report a tunneling-current junction welding strategy which can preserve the polymer and overcome its conductivity limit simultaneously: (1) the key point for overcoming the conductivity limit is controlling the polymer thickness to generate tunneling current; (2) because the junction resistance is much higher than the nanowire resistance and Joule heat mainly accumulates on the inside of the junction, fixed-point junction welding can be realized to merely remove polymer on the inside of the junction to fuse AgNWs and the polymer in other places can be preserved. Based on this strategy and a welding law refined by us, silver@polyvinylpyrrolidone core-shell (Ag@PVP) nanowire film is welded and the results demonstrate that this strategy is effective. Ag@PVP film exhibits good stability and high opto-electrical performance, indicating that PVP shell layer greatly improves the stability of AgNW but hardly affects its opto-electrical performance. Finally, an optoelectronic device employing the Ag@PVP film as the electrode is fabricated and shows efficiencies comparable to those of an optoelectronic device on indium tin oxide.
机译:核壳结构使银纳米线具有良好的稳定性。然而,由于非工业制备工艺和现有钝化层分散性差,极大地阻碍了其应用。聚合物外壳材料可以解决这些问题,但没有研究人员采用,因为除了去除聚合物,目前还没有任何方法可以克服绝缘聚合物的导电极限。在此,受扫描隧道显微镜隧道效应的启发,我们报告了一种隧道电流结焊接策略,该策略可以同时保护聚合物并克服其导电极限:(1)克服导电极限的关键是控制聚合物厚度以产生隧道电流;(2) 由于结电阻远高于纳米线电阻,焦耳热主要积聚在结的内部,因此可以实现定点结焊接,只需去除结内部的聚合物即可熔合AgNWs,并保留其他位置的聚合物。基于这一策略和我们完善的焊接法,silver@polyvinylpyrrolidone核壳(Ag@PVP)对纳米线薄膜进行了焊接,结果表明该策略是有效的。Ag@PVP薄膜具有良好的稳定性和较高的光电性能,表明PVP壳层极大地提高了AgNW的稳定性,但几乎不影响其光电性能。最后,一种采用Ag@PVP制作了薄膜作为电极,其效率与氧化铟锡上的光电器件相当。

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  • 作者单位

    Chongqing Univ Arts &

    Sci Micro Nano Optoelect Mat &

    Devices Int Sci &

    Tech Chongqing 402160 Peoples R China;

    Chongqing Univ Arts &

    Sci Micro Nano Optoelect Mat &

    Devices Int Sci &

    Tech Chongqing 402160 Peoples R China;

    Chongqing Univ Arts &

    Sci Micro Nano Optoelect Mat &

    Devices Int Sci &

    Tech Chongqing 402160 Peoples R China;

    Chongqing Univ Arts &

    Sci Micro Nano Optoelect Mat &

    Devices Int Sci &

    Tech Chongqing 402160 Peoples R China;

    Chongqing Univ Arts &

    Sci Micro Nano Optoelect Mat &

    Devices Int Sci &

    Tech Chongqing 402160 Peoples R China;

    Chongqing Univ Arts &

    Sci Micro Nano Optoelect Mat &

    Devices Int Sci &

    Tech Chongqing 402160 Peoples R China;

    Southwest Univ Sch Mat &

    Energy Chongqing 400715 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
  • 关键词

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