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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Indium selenide for Q-switched pulse generation in a mid-infrared fiber laser
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Indium selenide for Q-switched pulse generation in a mid-infrared fiber laser

机译:中红外光纤激光器中的Q开关脉冲产生硒化铟

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摘要

Mid-infrared (mid-IR) pulse modulation components are extremely limited and are not very effective. By fabricating a novel broadband two-dimensional (2D) material, indium selenide (InSe), and adopting it as the passive saturable absorber (SA), we demonstrate a stable Q-switched Er-ZBLAN fiber laser at 2.8 mu m. The stable Q-switching pulses can be maintained from the lasing pump threshold to the maximum pump power of 8.69 W, with the pulse repetition frequency ranging from 70.4 kHz to 253.2 kHz and the shortest pulse width of 423.2 ns. The obtained maximum value of average output power in this experiment is 712 mW, and the corresponding maximum pulse energy and peak power are 2.81 mu J and 5.71 W, respectively. The signal-to-noise ratio (SNR) of the laser output is 43.66 dB, which is larger than the majority of the passively Q-switched mid-IR fiber lasers reported so far. Besides, the nonlinear optical response at a mid-IR wavelength of similar to 2.8 mu m is also investigated. The experimental results demonstrate that the InSe material has great potential in mid-infrared pulse modulation and generation, and its performance can be comparable or even superior to the widely used SESAM.
机译:中红外(Mid-IR)脉冲调制组件非常有限,并且不是非常有效。通过制备一种新型的宽带二维(2D)材料硒化铟(InSe),并将其用作被动可饱和吸收体(SA),我们展示了一种稳定的调Q Er-ZBLAN光纤激光器,其调Q功率为2.8μm。稳定的调Q脉冲可以从激光泵浦阈值维持到8.69 W的最大泵浦功率,脉冲重复频率范围为70.4 kHz至253.2 kHz,最短脉冲宽度为423.2 ns。实验得到的平均输出功率最大值为712mw,对应的最大脉冲能量和峰值功率分别为2.81muj和5.71w。激光输出的信噪比(SNR)为43.66 dB,高于目前报道的大多数被动调Q中红外光纤激光器。此外,还研究了在中红外波长(约2.8μm)处的非线性光学响应。实验结果表明,InSe材料在中红外脉冲调制和产生方面具有很大的潜力,其性能可以与广泛使用的SESAM相媲美,甚至优于SESAM。

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    Shenzhen Univ Inst Microscale Optoelect Shenzhen 518060 Peoples R China;

    Shenzhen Univ Shenzhen Peoples Hosp 2 Affiliated Hosp 1 Dept Neurosurg Shenzhen Key Lab Neurosurg Shenzhen 518035 Peoples R China;

    Shenzhen Technol Univ Coll Engn Phys Ctr Adv Mat Diagnost Technol Shenzhen Key Lab Ultraintense Laser &

    Adv Mat Tec Shenzhen 518118 Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Shenzhen 518060 Peoples R China;

    Xiangtan Univ Sch Phys &

    Optoelect Hunan Key Lab Mirconano Energy Mat &

    Devices Xiangtan 411105 Peoples R China;

    Shenzhen Univ Shenzhen Peoples Hosp 2 Affiliated Hosp 1 Dept Neurosurg Shenzhen Key Lab Neurosurg Shenzhen 518035 Peoples R China;

    Shenzhen Univ Shenzhen Peoples Hosp 2 Affiliated Hosp 1 Dept Neurosurg Shenzhen Key Lab Neurosurg Shenzhen 518035 Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Shenzhen 518060 Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Shenzhen 518060 Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Shenzhen 518060 Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学 ;
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