首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Intrinsic auxeticity and negative piezoelectricity in two-dimensional group-IV dipnictide monolayers with in-plane anisotropy
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Intrinsic auxeticity and negative piezoelectricity in two-dimensional group-IV dipnictide monolayers with in-plane anisotropy

机译:二维组 - IV二维单层中的内在辅助和负压电性,具有面内各向异性

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摘要

Two-dimensional (2D) van der Waals (vdW) layered materials with orthorhombic symmetry and distinct planar crystallographic lattices down to the monolayer limit, can potentially display in-plane anisotropy and diverse functionalities arising from their structural anisotropy. Typically, group-IV monopnictides (SiP, SiAs, GeP and GeAs) and dipnictides (SiP2, SiAs2, GeP2 and GeAs2) are two prototypical types of synthetic vdW layered materials characterized by orthorhombic symmetry and in-plane anisotropy in their 2D layered structural forms. In the current work, in order to provide deep insights into the in-plane anisotropic properties and especially to explore the new functionalities associated with in-plane anisotropy that have not yet been uncovered experimentally so far, we perform first-principles calculations to systematically investigate the structural, mechanical, electronic and optical properties, and electromechanical responses for 2D group-IV monopnictide AB and dipnictide AB(2) (A = Si and Ge, B = P and As) monolayers. Based on our calculations, both 2D monopnictide and dipnictide monolayers are predicted to exhibit in-plane anisotropy in their mechanical, electronic and optical absorption properties, including distinct elastic constants, Young's moduli, effective carrier masses and optical absorption along the two planar directions. Especially, owing to the unique 2D puckered crystal structure composed of corner-sharing AB(4) tetrahedrons, AB(2) monolayers can exhibit an extraordinarily large in-plane negative Poisson's ratio (NPR) of up to -0.32, making these group-IV dipnictides rare 2D auxetic materials. Moreover, compared to the centrosymmetric AB monopnictides, 2D AB(2) monolayers are characterized by acentric symmetry, where non-zero electric polarization can be obtained along one of the planar axes. Such a structural polarity can lead to a sizable negative longitudinal piezoelectric coefficient d(33) as large as -11.84 pC N-1. These intriguing properties arise from the in-plane anisotropy making 2D group-IV dipnictides of great promise for applications such as nanoscale auxetic sensors and low dimensional electromechanical devices.
机译:二维(2D)范德瓦尔斯(vdW)层状材料具有正交对称性和独特的平面晶格,直至单层极限,可以潜在地显示平面内各向异性和由其结构各向异性产生的各种功能。通常情况下,IV组单斜(SiP、SiAs、GeP和GeAs)和双斜(SiP2、SiAs2、GeP2和GeAs2)是合成vdW层状材料的两种典型类型,其二维层状结构形式具有正交对称性和平面内各向异性。在目前的工作中,为了深入了解面内各向异性特性,特别是探索与面内各向异性相关的新功能,我们进行了第一性原理计算,以系统地研究结构、机械、电子和光学特性,以及2D IV组单肽AB和双肽AB(2)(A=Si和Ge,B=P和As)单分子膜的机电响应。根据我们的计算,我们预测二维单斜和双斜单分子膜在机械、电子和光学吸收特性方面都表现出平面内各向异性,包括不同的弹性常数、杨氏模量、有效载流子质量和沿两个平面方向的光吸收。特别是,由于AB(4)四面体具有独特的二维折叠晶体结构,AB(2)单分子膜可以表现出非常大的平面内负泊松比(NPR),高达-0.32,这使得这些IV族双光子晶体成为罕见的二维辅助材料。此外,与中心对称的AB单分子酸相比,2D AB(2)单分子膜具有非中心对称性,其中沿一个平面轴可以获得非零极化。这种结构极性可导致相当大的负纵向压电系数d(33),其大至-11.84 pCN-1。这些有趣的性质源自平面内的各向异性,使得2D IV族双光子晶体在纳米尺度的auxetic传感器和低维机电设备等应用中具有巨大的前景。

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    Xidian Univ China State Key Discipline Lab Wide Band Gap Semi Adv Interdisciplinary Res Ctr Flexible Elect Shaanxi Joint Key Lab Graphene Sch Microelect Xian 710071 Peoples R China;

    Xi An Jiao Tong Univ Frontier Inst Sci &

    Technol Xian 710049 Peoples R China;

    Xidian Univ China State Key Discipline Lab Wide Band Gap Semi Adv Interdisciplinary Res Ctr Flexible Elect Shaanxi Joint Key Lab Graphene Sch Microelect Xian 710071 Peoples R China;

    Xidian Univ China State Key Discipline Lab Wide Band Gap Semi Adv Interdisciplinary Res Ctr Flexible Elect Shaanxi Joint Key Lab Graphene Sch Microelect Xian 710071 Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
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