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首页> 外文期刊>Journal of Molecular Liquids >Additive-free electrodeposition of cobalt on silicon from 1-butyl-3-methylimidazolium tetrafluoroborate ionic liquid
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Additive-free electrodeposition of cobalt on silicon from 1-butyl-3-methylimidazolium tetrafluoroborate ionic liquid

机译:来自1-丁基-3-甲基咪唑鎓四氟硼酸盐离子液体的硅钴的无钴电沉积

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摘要

This study describes the use of the ionic liquid (IL), 1-butyl-3-methylimidazolium tetrafluoroborate ([BMI][BF4]) as an efficient and environmental-friendly electrolyte to obtain nanocrystalline cobalt (Co) electrodeposits on a silicon substrate without any additives. Co films were successfully electrodeposited from CoCl2 dissolved in a Lewis basic [BMI]Cl-[BF4] IL system, at 25 degrees C and 50 degrees C. Electrochemical techniques were employed to evaluate electrochemical parameters and to investigate the nucleation/growth mechanism involved. Results show that the electrodeposition of Co, under both temperatures, takes place by three-dimensional instantaneous nucleation with diffusion-controlled growth. Considerably small diffusion coefficients of the dissolved Co(II) species were found (1.60 x 10(-10) cm(2).s(-1) and 8.21 x 10 cm(2).s for 25 degrees C and 50 degrees C, respectively). Chemical composition, surface morphology and crystallinity of the electrodeposits were characterized by energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. High-quality and purity metallic cobalt electrodeposits were obtained. Co films were compact, smooth, bright and adhering to the substrate, exhibiting hcp single-phase structure with nanosized metallic particles of Co. Elevated current efficiencies (94.8% and 96.8% for 25 degrees C and 50 degrees C, respectively) were found, showing that [BMI][BF4] IL shows a large potential for the Co electrodeposition on a silicon substrate. (C) 2020 Elsevier B.V. All tights reserved.
机译:本研究描述了使用离子液体(IL)、1-丁基-3-甲基咪唑四氟硼酸盐([BMI][BF4])作为一种高效且环保的电解液,在无任何添加剂的情况下在硅衬底上获得纳米晶钴(Co)电沉积。在25℃和50℃下,成功地从溶解在Lewis碱性[BMI]Cl-[BF4]IL体系中的CoCl2上电沉积Co膜。采用电化学技术评估电化学参数,并研究所涉及的成核/生长机制。结果表明,在这两种温度下,Co的电沉积都是通过扩散控制生长的三维瞬时形核进行的。溶解的Co(II)物种的扩散系数相当小(1.60 x 10(-10)cm(2)。s(-1)和8.21 x 10厘米(2)。分别为25摄氏度和50摄氏度)。用能谱仪(EDS)、原子力显微镜(AFM)和X射线衍射仪(XRD)对电沉积层的化学成分、表面形貌和结晶度进行了表征。获得了高质量、高纯度的金属钴镀层。Co膜致密、光滑、明亮且粘附在衬底上,呈现出hcp单相结构,带有纳米级的Co金属颗粒。发现电流效率提高(25℃和50℃时分别为94.8%和96.8%),表明[BMI][BF4]IL在硅衬底上显示出巨大的共电沉积潜力。(C) 2020爱思唯尔B.V.保留所有紧身衣。

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