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首页> 外文期刊>Journal of Electronic Materials >Photoluminescence Quenching and Photo-Induced Charge Transfer Processes in Poly(3-octylthiophene) Polymer Based Hybrid Nano-composites by Ion Irradiation for Possible Optoelectronic Applications
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Photoluminescence Quenching and Photo-Induced Charge Transfer Processes in Poly(3-octylthiophene) Polymer Based Hybrid Nano-composites by Ion Irradiation for Possible Optoelectronic Applications

机译:通过离子辐射进行光致发光淬火和光诱导的聚(3-辛基噻吩)聚合物的杂化纳米复合材料,用于可能的光电应用

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Structural and spectroscopy studies have been carried out on conducting polymer poly(3-octylthiophene) (P3OT) and its copper-doped ZnO (Cu-ZnO/P3OT) hybrid nanocomposites (HNCs) under swift heavy ion (SHI) irradiation at different electronic energy depositions. The photoluminescence (PL) spectra of irradiated films exhibit a significant decrease in the intensity of emissions at higher ion fluences which is ascribed to the trapping of a photo-induced electron-hole by irradiation-induced free radicals and extrinsic non-radiative trap centers leading to the quenching effects. The generation of such free radicals and non-radiative recombination centers occurred through a chemical transformation of polymers in terms of polymer chain disordering, chain scission, chain aggregation, and bond breaking by ion irradiation depending upon the electronic energy depositions and ion fluences. The structural, vibrational, morphological, and optical properties of the irradiated P3OT and Cu-ZnO/P3OT HNCs films have been studied. Interestingly, the glancing-angle x-ray diffraction patterns of irradiated films reveal that the polymer and HNC films retain their chemical structures after high electronic deposition at lower ion fluences which leads to insignificant degradation of polymer and HNCs. However, a relative change in the intensity of characteristic peaks of polymer and ZnO was observed at higher ion fluences and is attributed to the disordering of polymer chains by high electronic depositions. Fourier transform infrared spectroscopy (FTIR) measurements also show similar observation, attributed to a decrease in the intensity of a few methyl and octyl functional groups of P3OT and HNCs. Further, optical study has shown a significant modification in the process of inter-chain and interfacial charge transfer. Finally, from these concurrent effects, PL quenching and photo-induced charge carrier transfer processes are understood by developing a schematic charge transfer diagram.
机译:对导电聚合物聚3-辛基噻吩(P3OT)及其铜掺杂ZnO(Cu-ZnO/P3OT)杂化纳米复合材料(HNCs)在不同电子能量沉积下的快速重离子(SHI)辐照进行了结构和光谱研究。辐照薄膜的光致发光(PL)光谱显示,在较高的离子通量下,发射强度显著降低,这归因于辐照诱导的自由基和导致猝灭效应的外部非辐射陷阱中心捕获了光致电子空穴。这种自由基和非辐射复合中心的产生是通过聚合物的化学转化发生的,聚合物链无序、断链、链聚集和离子辐照下的键断裂取决于电子能量沉积和离子通量。研究了辐照P3OT和Cu-ZnO/P3OT-HNCs薄膜的结构、振动、形貌和光学性质。有趣的是,辐照薄膜的掠角x射线衍射图显示,聚合物和HNC薄膜在低离子通量下高电子沉积后仍保留其化学结构,这导致聚合物和HNC的降解不明显。然而,在较高的离子注量下观察到聚合物和ZnO的特征峰强度的相对变化,这归因于高电子沉积导致聚合物链无序。傅里叶变换红外光谱(FTIR)测量也显示了类似的观察结果,归因于P3OT和HNC的一些甲基和辛基官能团的强度降低。此外,光学研究表明,链间和界面电荷转移过程发生了重大改变。最后,通过绘制电荷转移示意图,从这些同时发生的效应中,了解了光致发光猝灭和光致电荷载流子转移过程。

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