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首页> 外文期刊>Journal of Colloid and Interface Science >P-doped cobalt carbonate hydroxide@NiMoO4 double-shelled hierarchical nanoarrays anchored on nickel foam as a bi-functional electrode for energy storage and conversion
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P-doped cobalt carbonate hydroxide@NiMoO4 double-shelled hierarchical nanoarrays anchored on nickel foam as a bi-functional electrode for energy storage and conversion

机译:P掺杂的碳酸钴氢氧化物@ NIMOO4双壳的等级纳米纳阵列锚定,镍泡沫作为储能和转换的双功能电极

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The rational structure design and controllable surface modification of electrode materials plays a decisive role in constructing high performance energy storage and conversion devices. Herein, the P-doped cobalt carbonate hydroxide@NiMoO4 (P-CoCH@NiMoO4) nanowires@nanosheets double-shell hierarchical structure is successfully fabricated on nickel foam. The unique nanowire@nanosheet structure with gradient porous distribution and hydrophilic nature can facilitate both the charge and electron transfer based on the synergetic effects with conductive NiMoO4 array. Importantly, the dopant of P element can enrich oxygen vacancies on the surface of CoCH nanowire, thus increase the effective active sites and enhance the electrocatalytic performance. Therefore, when act as the supercapacitor electrode, the bi-functional P-CoCH@NiMoO4/NF material achieves high areal capacitance (5.08 F cm(-2) at 2 mA cm(-2), 0.75 mAh cm(-2)) and good cyclic stability (82.7% capacitance retention after 2000 cycles). Meanwhile, when utilize as the hydrogen evolution electrode in alkaline solution, a low overpotential (115 mV at 10 mA cm(-2)) and Tafel slope (113.5 mV dec(-1)) can also be achieved. (c) 2020 Elsevier Inc. All rights reserved.
机译:电极材料的合理结构设计和可控表面改性对构建高性能储能转换器件起着决定性的作用。在此,P掺杂的碳酸钴hydroxide@NiMoO4(P-CoCH@NiMoO4) nanowires@nanosheets在泡沫镍上成功地制备了双层壳结构。独一无二的nanowire@nanosheet基于与导电NiMoO4阵列的协同效应,具有梯度多孔分布和亲水性的结构可以促进电荷和电子转移。重要的是,P元素的掺杂可以使CoCH纳米线表面的氧空位丰富,从而增加有效活性中心,提高电催化性能。因此,当用作超级电容器电极时,双功能P-CoCH@NiMoO4/NF材料在2mA-cm(-2)、0.75mAh-cm(-2)时具有高的面积电容(5.08F-cm(-2))和良好的循环稳定性(2000次循环后电容保持率为82.7%)。同时,当用作碱性溶液中的析氢电极时,还可以获得较低的过电位(10mA cm(-2)时为115mV)和Tafel斜率(113.5mV dec(-1))。(c) 2020爱思唯尔公司版权所有。

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