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Intermediate excited state suppression and upconversion enhancement of Er3+ ions by carbon-doping boosting photocarrier separation in bismuth oxychloride nanosheets

机译:通过碳掺杂促进氧化氧氧氧化铋的光燃谱分离ER3 +离子的中间激发状态抑制和升高增强

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Low luminescence efficiency of rare-earth ions doped upconversion (UC) nanomaterials is still a major limitation for their applications. Here, based on bismuth oxychloride nanosheets that show efficient photocarriers separation due to combining spontaneous polarization and layered semiconductor, we report a new carbon heterovalent doping strategy for efficient UC luminescence enhancement by suppressing the intermediate excited states of Er3+ ions. The first-principles calculations and photoelectrochemical characterizations provide evidences that the replacement of C ions for Cl strengthen the spontaneous polarization and inter electric field (IEF) of bismuth oxychloride nanosheets, which further improve the photocarriers separation efficiency. Under 808 or 980 nm excitation, the emission intensity of I-4(13/2) energy level of Er3+ ions (1550 nm) increase slightly with C doping, but the its decay time and the visible UC emission are improved tremendously at the same time. We show that the recombination rate of intermediate excited state electrons of Er3+ ions with the ground state is inhibited by the enhanced IEF, which promotes the energy reabsorption transition to upper energy levels, thus enhancing the visible UC emission. This work not only may provide a new insight into the method for engineering of UC emissions but also deepen the understanding for layered semiconducting material to modify the transition of Lanthanide ions. (C) 2020 Elsevier Inc. All rights reserved.
机译:稀土离子掺杂的上转换(UC)纳米材料的低发光效率仍然是限制其应用的主要因素。在这里,基于氯氧铋纳米片,由于结合了自发极化和分层半导体,可以实现有效的光载流子分离,我们报告了一种新的碳杂价掺杂策略,通过抑制Er3+离子的中间激发态来有效增强UC发光。第一性原理计算和光电化学表征表明,C离子取代Cl增强了氧氯化铋纳米片的自发极化和电场,进一步提高了光载流子分离效率。在808或980nm激发下,掺碳使Er3+离子(1550nm)的I-4(13/2)能级发射强度略有增加,但其衰减时间和可见UC发射显著改善。我们发现,增强的IEF抑制了Er3+离子的中间激发态电子与基态的复合速率,从而促进了能量再吸收转变到更高能级,从而增强了可见UC发射。这项工作不仅为UC发射的工程化提供了新的见解,而且加深了对层状半导体材料改变镧系离子跃迁的理解。(C) 2020爱思唯尔公司版权所有。

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