首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Investigation of SiO2-B2O3-ZnO-Bi2O3 glass frits on the interface reaction of silver front contacts
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Investigation of SiO2-B2O3-ZnO-Bi2O3 glass frits on the interface reaction of silver front contacts

机译:SiO2-B2O3-ZnO-Bi2O3玻璃料对银前触头界面反应的研究

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摘要

This work investigates the interface reaction of Ag/Si contact with different Bi2O3 containing glasses in Ag pastes. The Bi2O3 content has a strong effect on the glass transition temperature (T-g) and glass structure. The contact interface is tailored by transmission electron microscopy. For low T-g glass frits, the SiNx layer is decomposed and oxidized, forming a SiO2 layer. Both globules and inverted pyramids of Ag crystallites are observed in the vicinity of the interface. In addition, very small Ag crystallites are well dispersed in the SiO2 layer, which acts as effective sites for tunneling current. The contact formation mechanism can be explained by the electrochemical model. In this model, the T-g of glass frits plays an important role in the solubility and diffusivity of Ag+ and O2- ions in glass. Phase separation is also observed due to dissolution of Si4+ ions into the glass matrix. Current-voltage measurement reveals that glass frits with higher Bi2O3 content form a Ag/Si contact structure with lower resistance at the firing temperature of 850 degrees C. (C) 2020 Elsevier B.V. All rights reserved.
机译:本文研究了银浆中不同含Bi2O3玻璃与Ag/Si接触的界面反应。Bi2O3含量对玻璃化转变温度(T-g)和玻璃结构有很大影响。接触界面由透射电子显微镜定制。对于低T-g玻璃料,SiNx层被分解和氧化,形成SiO2层。在界面附近观察到银微晶的球状和倒金字塔。此外,非常小的银微晶很好地分散在SiO2层中,这是隧道电流的有效位置。接触形成机理可用电化学模型解释。在该模型中,玻璃料的T-g对Ag+和O2-离子在玻璃中的溶解度和扩散率起着重要作用。由于Si4+离子溶解到玻璃基质中,也观察到相分离。电流电压测量显示,Bi2O3含量较高的玻璃料在850摄氏度(C)2020爱思唯尔B.V.的烧成温度下形成了电阻较低的Ag/Si接触结构。版权所有。

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