首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Genesis of magnetism in graphene/MoS2 van der Waals heterostructures via interface engineering using Cr-adsorption
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Genesis of magnetism in graphene/MoS2 van der Waals heterostructures via interface engineering using Cr-adsorption

机译:通过使用CR-吸附的界面工程,石墨烯/ MOS2范德瓦尔斯磁性磁性的成因

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Graphene/MoS2 heterostructure (G/MS-H) has distinctive and superlative electronic properties as it contains features of both graphene and MoS2. Our first-principles calculations reveal this heterostructure has a little bandgap (40 meV) and zero magnetic moment in the pristine form. In the present work, we have attempted to induce magnetism in the resultant heterostructure by adsorbing Cr atom at (i) Top (G-Top) (ii) Hollow (G-Hollow) configurations in the graphene layer and (iii) Top (S-Top) and (iv) Hollow (S-Hollow) in the MoS2 layer. However, only G-Top and S-Hollow are energetically favorable amid these configurations. Our results demonstrate that Cr-adsorption persuades the significant magnetic moment. Both the stable configurations (G-Top and S-Hollow) transpire metallicity with a Dirac point shift in the valence band. The magnetism originates from the interactions between Cr-3d states with C-2p and S-3p states. These results summarize that the resultant adsorbed heterostructure may serve as a phenomenal breakthrough for nanomagnetism. (C) 2020 Elsevier B.V. All rights reserved.
机译:石墨烯/MoS2异质结构(G/MS-H)兼有石墨烯和MoS2的特性,因此具有独特且最优异的电子特性。我们的第一性原理计算表明,这种异质结构有一个小的带隙(40 meV)和零磁矩的原始形式。在目前的工作中,我们试图通过在石墨烯层的(i)顶部(G-Top)(ii)空心(G-Hollow)结构和(iii)顶部(S-Top)和(iv)空心(S-Hollow)结构中吸附Cr原子,在所形成的异质结中诱导磁性。然而,在这些配置中,只有G-Top和S-Hollow在能量上是有利的。我们的结果表明,铬吸附说服了显著的磁矩。这两种稳定构型(G-Top和S-Hollow)都显示出金属丰度,价带中存在狄拉克点位移。磁性来源于Cr-3d态与C-2p和S-3p态之间的相互作用。这些结果表明,由此产生的吸附异质结构可能是纳米磁性的一个重大突破。(C) 2020爱思唯尔B.V.版权所有。

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