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Spectral supralinearity of silicon photodiodes in visible light due to surface recombination

机译:由于表面重组引起的可见光下可见光硅光电二极管的光谱SupralInity

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摘要

Spectral supralinearity of silicon photodiodes in visible light was investigated. The experimental spectral supralinearity results were compared with the calculation results using a device simulator, PC1D that includes the front surface recombination parameters, and these comparison results were in reasonable agreement for a silicon photodiode. These comparison results show that supralinearity in visible light clearly occurs with a front surface charge density of more than 10(12) cm(-2) and the included parameters are adequate for quantitatively predicting the internal quantum efficiency of silicon photodiodes. (C) 2016 Optical Society of America
机译:研究了可见光中硅光电二极管的光谱素度性。 将实验光谱SupralInit度结果与使用器件模拟器的计算结果进行比较,包括前表面重组参数,这些比较结果适用于硅光电二极管。 这些比较结果表明,可见光中的Supralineearity清楚地发生,前表面电荷密度大于10(12)厘米(-2),并且包括的参数足以定量预测硅光电二极管的内部量子效率。 (c)2016年美国光学学会

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  • 来源
    《Applied optics》 |2016年第11期|共6页
  • 作者单位

    Natl Inst Adv Ind Sci &

    Technol Natl Metrol Inst Japan 1-1-1 Umezono Tsukuba Ibaraki 3058563 Japan;

    Natl Inst Adv Ind Sci &

    Technol Natl Metrol Inst Japan 1-1-1 Umezono Tsukuba Ibaraki 3058563 Japan;

    Natl Inst Adv Ind Sci &

    Technol Natl Metrol Inst Japan 1-1-1 Umezono Tsukuba Ibaraki 3058563 Japan;

    Natl Inst Adv Ind Sci &

    Technol Natl Metrol Inst Japan 1-1-1 Umezono Tsukuba Ibaraki 3058563 Japan;

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  • 正文语种 eng
  • 中图分类 应用;
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