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Improving the-3 dB bandwidth of micro-size LEDs through p-electrode patterns for visible light communication

机译:通过P-电极图案改善微尺寸LED的-3 dB带宽,用于可见光通信

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摘要

We systematically studied the effect of p-electrode patterns on the optical properties and -3 dB bandwidth of micro-size LEDs. The current spreading distribution can be effectively improved via adjusting the number and shape of the p-electrode branch, thus increasing the injection saturation current density and decreasing the series resistance. Compared with the micro-size LED using a disk p-electrode, the saturation light output power and -3 dB bandwidth of the micro-size LED using a six-branches spiral p-electrode increase by 39.48% and 76.61%, respectively. Such a p-electrode pattern is a promising solution for micro-size LED applications in both illumination and visible light communication systems. (C) 2020 Optical Society of America
机译:我们系统地研究了P电极图案对微尺寸LED的光学性质和-3 dB带宽的影响。 通过调节P电极支架的数量和形状,可以有效地改善电流扩散分布,从而提高喷射饱和电流密度并降低串联电阻。 与使用盘P电极的微尺寸LED相比,使用六分支P-电极的微尺寸LED的饱和光输出功率和-3dB带宽分别增加39.48%和76.61%。 这种P电极图案是用于照明和可见光通信系统中的微尺寸LED应用的有希望的解决方案。 (c)2020美国光学学会

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  • 来源
    《Applied optics》 |2020年第23期|共8页
  • 作者单位

    South China Univ Technol Sch Elect &

    Informat Engn Guangdong Prov Engn Lab Wide Bandgap Semicond Mat Guangzhou 510640 Peoples R China;

    South China Univ Technol Sch Elect &

    Informat Engn Guangdong Prov Engn Lab Wide Bandgap Semicond Mat Guangzhou 510640 Peoples R China;

    South China Univ Technol Engn Res Ctr Optoelect Guangdong Prov Sch Phys &

    Optoelect Guangzhou 510640 Peoples R China;

    South China Univ Technol Engn Res Ctr Optoelect Guangdong Prov Sch Phys &

    Optoelect Guangzhou 510640 Peoples R China;

    South China Univ Technol Sch Elect &

    Informat Engn Guangdong Prov Engn Lab Wide Bandgap Semicond Mat Guangzhou 510640 Peoples R China;

    South China Univ Technol Sch Elect &

    Informat Engn Guangdong Prov Engn Lab Wide Bandgap Semicond Mat Guangzhou 510640 Peoples R China;

    South China Univ Technol Sch Elect &

    Informat Engn Guangdong Prov Engn Lab Wide Bandgap Semicond Mat Guangzhou 510640 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用;
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