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Trends in Memory Technologies-Past and Future

机译:记忆技术的趋势 - 过去和未来

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The progress of information technology has led to great demand for semiconductors for application to servers, PCs, cellular phones, and personal digital assistants (PDAs), resulting in a steady annual memory bit growth rate exceeding 60 percent. Miniaturization and design technologies have made it possible for memories, especially dynamic RAM (DRAM), to integrate four times more bits in one chip every three years, and have significantly reduced bit-cost.Recently, however, with the expansion of memory application fields, the market has been requesting higher-value-added memory products featuring low-voltage operation, low power, and high functionality as benefits of these technologies. On the other hand, in recent memory development more attention seems to have been paid to the rapid growth of flash memory, recovering demand for static RAM (SRAM), and other emerging memories such as ferroelectric random access memory (FeRAM) and magnetic random access memory (MRAM), which are expected to be an "ultimate memory" in the future.
机译:信息技术的进展导致半导体对服务器,PC,蜂窝电话和个人数字助理(PDA)的应用,导致稳定的年度记忆位增长率超过60%。小型化和设计技术使存储器,尤其是动态RAM(DRAM),每三年整合四个芯片中的四倍位,并且具有显着降低的比特成本。但是,随着内存应用领域的扩展,可以显着降低比特成本,市场一直要求更高附加值的内存产品,具有低压操作,低功耗和高功能,作为这些技术的好处。另一方面,在最近的记忆开发中,更加关注似乎已经支付给闪存的快速增长,恢复对静态RAM(SRAM)的需求,以及其他新兴存储器,如铁电动随机存取存储器(FERAM)和磁随机接入记忆(MRAM),预计将来是一个“终极记忆”。

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