Resistive Switching Induced by Metallic Filaments Formation through Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate)

摘要

We report the design and fabrication of Al/ poly(3,4-ethylene-dioxythiophene);poly(styrenesulfonate) (PE-DOT:PSS)/Cu resistive memory devices that utilize the Cu redox reaction and conformational features of PEDOT:PSS to achieve resistive switching. The top Cu electrode acts as the source of the redox ions that are injected through the PEDOT;PSS layer during the forming process. The Cu filament is confirmed directly using the cross-sectional images of transmission electron microscopy and energy-dispersive X-ray spectroscopy. The resultant resistive memory devices can operateover a small voltage range, i.e., the switching-on threshold voltage is less than 1.5 V and the absolute value of the switching-off threshold voltage is less than 1.0 V. The on/off current ratio is as large as 1 x 10~4 and the two different resistance states can be maintained over 10~6 s. Moreover, the devices present good thermal stability that the resistive switching can be observed even at temperature up to 160 °C, at which the oxidation of the Cu top electrode is the failure factor. Furthermore, the cause of failure for Al/PEDOT:PSS/Cu memory devices at higher temperature is confirmed to be the oxidation of Cu top electrode.