机译:基于Ni2O3改性的Al2O3-SiO2-TiO2电介质陶瓷中增强介电击穿强度
Chinese Acad Sci Shanghai Inst Ceram Key Lab Inorgan Funct Mat &
Devices 1295 Dingxi Rd Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram Key Lab Inorgan Funct Mat &
Devices 1295 Dingxi Rd Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram Key Lab Inorgan Funct Mat &
Devices 1295 Dingxi Rd Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram Key Lab Inorgan Funct Mat &
Devices 1295 Dingxi Rd Shanghai 200050 Peoples R China;
China Acad Engn Phys Mianyang 621900 Peoples R China;
China Acad Engn Phys Mianyang 621900 Peoples R China;
China Acad Engn Phys Mianyang 621900 Peoples R China;
China Acad Engn Phys Mianyang 621900 Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram Key Lab Inorgan Funct Mat &
Devices 1295 Dingxi Rd Shanghai 200050 Peoples R China;
Dielectric breakdown strength; Ni2O3-doping; Ceramic; Microstructure;
机译:基于Ni2O3改性的Al2O3-SiO2-TiO2电介质陶瓷中增强介电击穿强度(Vol 38,PG 3861,2018)
机译:新型SRTIO3陶瓷系统的增强介电击穿强度和超快速放电性能
机译:通过热压辅助液相烧结制备的TiO2-SiO 2-Al2O3陶瓷中增强介电击穿强度
机译:氧化铝陶瓷用CaO-SiO_2-MgO,YB_2O_3和ZRO_2添加剂介电击穿强度和微波介电性能
机译:二氧化钛改性的五氧化二钽陶瓷的介电性能增强的起源。
机译:基于聚多巴胺涂层云母的高击穿强度和低介电损耗的硅橡胶复合材料
机译:用含氟聚合物改性的BATIO3填料增强了聚合物纳米复合材料的击穿强度和抑制介电损失