Comparative analysis of specifications for HgCdTe photodiode-based infrared photodetectors and for GaAs/AlGaAs quantum-well photodetectors

摘要

We discuss the design characteristics of silicon-based signal multiplexers for multi-element infrared detectors using photodiodes based on the HgCdTe compound and GaAs/AlGaAs multi-layer quantum-well structures and compare their noise-equivalent temperature difference when using silicon-based multiplexers employing line-by-line and frame-by-frame signal accumulation of the photosensitive elements. We also investigate the noise-equivalent temperature difference for a variety of infrared detectors using these multiplexers as a function of a parameter computed by multiplying the zero-bias differential resistance of the photosensitive elements by the area of the photosensitive element, the array element size, the quantum efficiency, and the wavelength of peak sensitivity for the photosensitive elements. The research results obtained are then used to develop multiplexers for use in multi-element high-temperature-resolution photodetectors for the 8-14 mu m and 3-5 mu m spectral regions. (C) 2017 Optical Society of America