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Pressure-induced phase transitions of lead iodide

机译:铅碘化的压力诱导的相变

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摘要

Pressure is a fundamental thermodynamic variable that can efficiently modify crystal or electronic structure leading to new material states of interest. Here we search the crystal structures of lead iodide (PbI2) up to 200 GPa using the swarm-intelligent CALYPSO structure prediction method combined with ab initio calculations. Four new stable high-pressure phases (orthorhombic Pnma, tegragonal I4/mmm, orthorhombic Immm and monoclinic C2/c) have been uncovered. A layered to three-dimensional structure transition from the ambient-pressure 2H phase to the orthorhombic Pnma phase is proposed to be taking place at similar to 2.5 GPa. The newly proposed Pnma phase is a semiconductor with an indirect band gap of 1.68 eV. It is isosymmetric to the well-known cotunnite phase but with a very different bonding pattern. The semiconductor-metal transition of PbI2 occurs at similar to 27.2 GPa, where the semiconducting Pnma phase transforms to the metallic I4/mmm phase due to pressure-induced broadening of both the valance and conduction bands. The metallic nature persists in the higher-pressure phases of Immm and C2/c up to about 169.1 GPa, above which PbI2 decomposes to its constituent elements. The current results represent a significant step toward the understanding of structural and electronic properties of PbI2 under compression.
机译:压力是一种基本的热力学变量,可以有效地修改晶体或电子结构,导致新的物质兴趣。在这里,我们使用与AB Initio计算结合的群智能Calypso结构预测方法搜索铅碘化物(PBI2)的晶体结构最多200 GPa。已经发现了四种新的稳定高压阶段(正交PNMA,TEAGORAPAL I4 / MMM,正交IMMM和单斜晶C2 / c)。提出了从环境压力2H相到正交pNMA相的三维结构转变,以进行类似于2.5GPa。新提出的PNMA相是具有1.68eV的间接带隙的半导体。它对众所周知的Cotunnite阶段是异质性,但具有非常不同的粘合图案。 PBI2的半导体 - 金属转变发生在类似于27.2GPa的情况下,其中半导体PNMA相对于金属I4 / MMM相,由于遵循算子和传导带的压力凸起而导致的金属I4 / MMM相。金属性质在IMMM的高压阶段持续,高达约169.1GPa的C2 / C,以上PBI2分解为其组成元素。目前的结果代表了在压缩下理解PBI2的结构和电子性质的重要一步。

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  • 来源
    《RSC Advances》 |2016年第88期|共6页
  • 作者单位

    Jilin Univ Coll Elect Sci &

    Engn State Key Lab Integrated Optoelect Changchun 130012 Peoples R China;

    Jilin Univ Coll Elect Sci &

    Engn State Key Lab Integrated Optoelect Changchun 130012 Peoples R China;

    Jilin Univ State Key Lab Superhard Mat Changchun 130012 Peoples R China;

    Jilin Univ Coll Elect Sci &

    Engn State Key Lab Integrated Optoelect Changchun 130012 Peoples R China;

    Jilin Univ Coll Elect Sci &

    Engn State Key Lab Integrated Optoelect Changchun 130012 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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