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Interplay of long-range and short-range Coulomb interactions in an Anderson-Mott insulator

机译:anderson-mott绝缘体的远程和短程库仑相互作用的相互作用

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摘要

In this paper, we tackle the complexity of coexisting disorder and Coulomb electron-electron interactions (CEEIs) in solids by addressing a strongly disordered system with intricate CEEIs and a screening that changes both with charge carrier doping level Q and temperature T. We report on an experimental comparative study of the T dependencies of the electrical conductivity sigma and magnetic susceptibility x of polyaniline pellets doped with dodecylbenzenesulfonic acid over a wide range. This material is special within the class of doped polyaniline by exhibiting in the electronic transport a crossover between a low-T variable range hopping (VRH) and a high-T nearest-neighbor hopping (NNH) well below room temperature. Moreover, there is evidence of a soft Coulomb gap Delta(C) in the disorder band, which implies the existence of a long-range CEEI. Simultaneously, there is an onsite CEEI manifested as a Hubbard gap U and originating in the electronic structure of doped polyaniline, which consists of localized electron states with dynamically varying occupancy. Therefore, our samples represent an Anderson-Mott insulator in which long-range and short-range CEEIs coexist. The main result of the study is the presence of a crossover between low- and high-T regimes not only in sigma(T) but also in x(T), the crossover temperature T* being essentially the same for both observables over the entire doping range. The relatively large electron localization length along the polymer chains results in U being small, between 12 and 20 meV for the high and low Q, respectively. Therefore, the thermal energy at T* is sufficiently large to lead to an effective closing of the Hubbard gap and the consequent appearance of NNH in the electronic transport within the disorder band. Delta(C) is considerably larger than U, decreasing from 190 to 30 meV as Q increases, and plays the role of an activation energy in the NNH.
机译:在本文中,我们通过用复杂的CEEIS解决强紊乱的系统以及用电荷载体掺杂水平Q和温度T来改变的筛选来解决固体中共存疾病和库仑电子 - 电子相互作用(CEEIS)的复杂性。我们报告多烷苯磺酸掺杂多烷粒粒子掺杂掺杂掺杂的电导率Sigma和磁化率X的实验对比研究。通过在低T可变范围跳跃(VRH)之间的交叉中,该材料在掺杂的聚苯胺类别中是特殊的掺杂多蛋白酶在掺杂的聚苯胺中,并且在室温低于室温下的低T可变范围跳跃(VRH)之间的交叉。此外,有证据表明在病症带中的软豆间隙δ(c),这意味着存在远程CEEI。同时,存在一个现场CEEI,作为Hubbard Gap U和源自掺杂聚苯胺的电子结构,其包括具有动态变化的占用率的局部电子状态。因此,我们的样本代表了一个Anderson-Mott绝缘体,其中远程和短程Ceeis共存。该研究的主要结果是不仅在Σ(t)中,而且在x(t)中的低于和高T方案之间的交叉,交叉温度t *对于整个可观察到的横跨温度t *基本相同掺杂范围。沿着聚合物链的相对大的电子定位长度可以分别导致U小,12至20mEV的高低Q。因此,T *的热能足够大,以导致哈巴德间隙的有效关闭,并且在无序带内的电子传送中的NNH的随后出现。 Delta(c)比Q大大大,从190〜30 meV减少,Q增加,并发挥NNH中的激活能量的作用。

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