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Generalizable density functional theory based photoemission model for the accelerated development of photocathodes and other photoemissive devices

机译:基于广义的密度函数理论基于光电阴影和其他光发光装置加速开发的光电模型

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摘要

In this work, we have developed an ab initio photoemission model that accurately describes the photoemission process for the most diverse range of photocathode materials to date. Compared to previous photoemission models, this is accomplished by considerably reducing the number of approximations and assumptions used in representing the photoemission process and the photoemitting material itself. Notably, our model directly includes the full electronic structure of the material, photoexcitation probabilities for all direct optical transitions, and an improved surface-vacuum barrier transmission probability. To test the performance of our model, we perform validations with experimental measurements for all photocathode materials studied in this work. Whereas previous models have often qualitatively disagreed with the measured photoemission properties of some materials, our model is found to provide quantitative agreement with experimental measurements for all tested materials. As an example, our method predicts the root-mean-square transverse momentum of electrons emitted from PbTe up to an excess energy of 1.0 eV with a mean absolute error that is similar to 5x less than from previously derived expressions. Perhaps more importantly, our model is able to match experimentally observed decreases in intrinsic emittance with increasing photon energy-a feat that current analytical models are unable to achieve. We expect that the broad applicability of our model will greatly accelerate the rate of discovery, characterization, and scientific understanding of photocathodes and other photonic devices.
机译:在这项工作中,我们开发了AB Initio PhotoMission模型,可以准确地描述迄今为止最多样化的光电阴极材料的光曝光过程。与以前的光曝光模型相比,这是通过显着减少代表光曝气工艺和光专用材料本身所用的近似和假设的数量来实现的。值得注意的是,我们的模型直接包括材料的全电子结构,用于所有直接光学过渡的光透镜概率,以及改进的表面真空屏障传输概率。为了测试模型的性能,我们对在这项工作中研究的所有光阴道材料的实验测量进行了实验测量的验证。然而,以前的模型经常与某些材料的测量光曝光性质进行了质疑,而我们的模型则发现我们的模型提供了所有测试材料的实验测量的定量协议。作为示例,我们的方法预测从PBTE发出的电子的根均方横向动量,其具有1.0eV的过量能量,其平均绝对误差与来自先前推导的表达式的5倍类似于5倍。也许更重要的是,我们的模型能够通过增加光子能量来匹配实验观察到的内在可粘合率降低 - 目前分析模型无法实现的壮举。我们预计我们模型的广泛适用性将极大地加速对光电阴影和其他光子器件的发现,表征和科学理解的速度。

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