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首页> 外文期刊>Physical review, B >Investigation of the electronic structure and lattice dynamics of the thermoelectric material Na-doped SnSe
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Investigation of the electronic structure and lattice dynamics of the thermoelectric material Na-doped SnSe

机译:热电材料的电子结构和晶格动力学的研究Na-掺杂SNSE

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摘要

SnSe has drawn considerable attention on a global scale due to its intrinsic low thermal conductivity and large figure of merit along the b axis. In Na-doped SnSe, further enhancement of the thermoelectric performance has been reported. Using angle-resolved photoemission spectroscopy and inelastic neutron scattering, we have studied how electronic structures and lattice dynamics evolve with temperature in Na-doped SnSe. Our data show that the effective mass of the Se p(z) orbital along the Gamma - Z direction has a very weak temperature dependence, while the chemical potential shifts significantly along with the increase in the gap size evidenced by infrared absorption measurements. Inelastic neutron scattering reveals one acoustic TA and two low-lying optical (TO1 and TO2) phonon modes. Their temperature-dependent behaviors indicate that the TO1 and TA modes contribute more to the reduction of the lattice thermal conductivity with temperature increases. The estimated value of the lattice thermal conductivity based on the lattice dynamics is significantly larger than that determined by transport measurements, suggesting that extrinsic factors, such as the imperfection of the lattice, could drastically suppress the lattice thermal conductivity. Our data suggest that temperature-dependent properties of both electronic structures and phonon dynamics need to be taken into account for the investigation of the underlying physics of hole-doped SnSe.
机译:由于其内在的低导热率和沿B轴的大型优点,SNSE在全球范围内引起了相当大的关注。在Na-掺杂的SNSE中,已经报道了热电性能的进一步提高。使用角度分辨的光曝光光谱和无弹性中子散射,我们研究了电子结构和晶格动力学如何随着Na-掺杂的SNSE温度演变。我们的数据表明,沿伽马栓塞方向的SE P(Z)轨道的有效质量具有非常弱的温度依赖性,而化学电位随着红外吸收测量的差距尺寸的增加而变化。无弹性中子散射揭示了一种声学TA和两个低位光学(TO1和TO2)声子模式。它们的温度依赖性行为表明TO1和TA模式促进了晶格导热率的更低,温度升高。基于晶格动力学的晶格导热率的估计值显着大于通过运输测量确定的估计值,这表明外在因素(例如所述格子的缺陷)可以大大抑制晶格导热率。我们的数据表明,需要考虑电子结构和声子动态的温度依赖性,以考虑对孔掺杂SNSE的底层物理学进行调查。

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  • 来源
    《Physical review, B 》 |2018年第9期| 共7页
  • 作者单位

    Univ Sci &

    Technol China Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

    Univ Sci &

    Technol China Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

    Chinese Acad Sci Chongqing Inst Green &

    Intelligent Technol Chongqing 400714 Peoples R China;

    KEK Inst Mat Struct Sci Tokai Ibaraki 3191106 Japan;

    KEK Inst Mat Struct Sci Tokai Ibaraki 3191106 Japan;

    Japan Atom Energy Agcy Japan Proton Accelerator Res Complex Tokai Ibaraki 3191195 Japan;

    KEK Inst Mat Struct Sci Tokai Ibaraki 3191106 Japan;

    KEK Inst Mat Struct Sci Tsukuba Ibaraki 3050801 Japan;

    Univ Sci &

    Technol China Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

    Univ Sci &

    Technol China Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

    Japan Atom Energy Agcy Japan Proton Accelerator Res Complex Tokai Ibaraki 3191195 Japan;

    Chinese Acad Sci Chongqing Inst Green &

    Intelligent Technol Chongqing 400714 Peoples R China;

    Univ Sci &

    Technol China Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

    KEK Inst Mat Struct Sci Tokai Ibaraki 3191106 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 固体物理学 ;
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