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Influence of negative bias pulse parameters on accumulation of macroparticles on the substrate immersed in titanium vacuum arc plasma

机译:负偏压脉冲参数对浸入钛真空电弧等离子体的基体上大颗粒堆积的影响

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The paper presents the results of an experimental study of the influence of a substrate negative bias with various pulse lengths and pulse repetition rates ranging from several pulses per second to 10(5) pulses per second on the macroparticle accumulation on the substrate immersed in DC titanium vacuum arc plasma. It was found that the increase of the bias pulse frequency from 10 up to 10(5) pulses per second at pulse length 7 mu s, as well as bias pulse lengths from 5 mu s to 25 mu s at fixed frequency of 30 pulses per second at bias pulse amplitude -2 kV and ion-plasma substrate treatment time 30 s led to gradual almost linear up to 3-fold decrease of the surface number density of MPs on the substrate immersed in titanium vacuum arc plasma at plasma ion saturation current density of 10 mA/cm(2). The decrease of ion current density down to 3.5 mA/cm(2) leads to the reduction of the macroparticle suppression efficiency. The influence of multiple recharging of the macroparticles in plasma and the sheath on the reflection of these macroparticles in the sheath electric field is discussed. It was experimentally found that the shape of MPs and their adhesion to the substrate surface strongly depends on bias pulse, plasma and substrate parameters. It was shown that cooled vacuum arc MPs can be melted in high-voltage plasma sheath. (C) 2016 Elsevier B.V. All rights reserved.
机译:本文提供了实验研究的结果,该实验研究了基底脉冲的负脉冲对脉冲长度和脉冲重复率的影响,脉冲负脉冲从每秒数个脉冲到每秒10(5)个脉冲,对浸入DC钛中的基底上的大颗粒堆积产生影响真空电弧等离子体。已发现,在脉冲长度为7μs时,偏置脉冲频率从每秒10个上升到10(5)个脉冲;在固定频率为30个脉冲/秒的情况下,偏置脉冲长度从5μs到25μs。在偏压脉冲振幅-2 kV和离子等离子体衬底处理时间30 s的第二秒,导致在等离子离子饱和电流密度下浸入钛真空电弧等离子体中的衬底上的MP的表面数密度逐渐接近线性地下降多达3倍10 mA / cm(2)。离子电流密度降低到3.5 mA / cm(2)会导致大颗粒抑制效率的降低。讨论了等离子体和鞘层中多次充电对鞘层电场中这些宏颗粒反射的影响。实验发现,MP的形状及其对基材表面的附着力在很大程度上取决于偏置脉冲,等离子体和基材参数。结果表明,冷却的真空电弧MP可以在高压等离子体鞘中熔化。 (C)2016 Elsevier B.V.保留所有权利。

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