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首页> 外文期刊>Physica, B. Condensed Matter >Electronic structural difference between Li7VN4 and Li7MnN4 due to the replacement of V with Mn: A simulation by a discrete variational Xa method
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Electronic structural difference between Li7VN4 and Li7MnN4 due to the replacement of V with Mn: A simulation by a discrete variational Xa method

机译:由Mn取代V引起的Li7VN4和Li7MnN4之间的电子结构差异:离散变分Xa方法的模拟

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The difference in electronic structure of Li_7MN_4 (M=V and Mn) due to the replacement of V with Mn is studied by the discrete variational (DV) Xa method. Li_7VN_4 and Li_7MnN_4 crystallize in the same zincblende- like structure (space group: P-43n) with similar lattice constants of 9.6090 and 9.5548 A , respectively. The DV-Xa calculations show that Li_7VN_4 is a semiconductor with energy gap between the empty V-3d related band and the completely occupied N-2p band, while Li7MnN4 has a metallic electron configuration because of the partially occupied Mn-3d related band located above the completely filled N-2p band, exhibiting the shift of the Fermi level caused by an increase in electron due to the replacement of V with Mn, where Mn (electron configuration: 3d~54s~2) owns two more 3d electrons than V (3d~34s~2) does. Electron paramagnetic resonance and magnetic susceptibility measurements reveal that Li7MnN4 is paramagnetic, resulting from the electrons partially occupying the Mn-3d related band, while Li7VN_4 is diamagnetic, arising from the un-occupation of the V-3d related band. These experiments support the computational results.
机译:通过离散变分(DV)Xa方法研究了由于用Mn取代V而引起的Li_7MN_4的电子结构差异(M = V和Mn)。 Li_7VN_4和Li_7MnN_4在相同的闪锌矿状结构(空间群:P-43n)中结晶,晶格常数分别为9.6090和9.5548A。 DV-Xa计算表明,Li_7VN_4是在空V-3d相关带和完全占据的N-2p带之间具有能隙的半导体,而Li7MnN4由于位于上方的部分Mn-3d相关带而具有金属电子结构。完全填充的N-2p谱带,表现出费米能级的移动,这是由于V被Mn取代引起的电子增加而引起的费米能级的偏移,其中Mn(电子构型:3d〜54s〜2)比V具有两个多的3d电子( 3d〜34s〜2)。电子顺磁共振和磁化率测量表明,Li7MnN4是顺磁性的,这是由于电子部分占据了Mn-3d相关带,而Li7VN_4是反磁性的,是由于未占据V-3d相关带。这些实验支持计算结果。

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