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首页> 外文期刊>Physica, B. Condensed Matter >Fundamental and excited states of F-type centres in MgSiO_3 perovskite
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Fundamental and excited states of F-type centres in MgSiO_3 perovskite

机译:MgSiO_3钙钛矿中F型中心的基本和激发态

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Quantum-chemical modelling based on the HartreeFock methodology and a periodic supercell model is done to study oxygen vacancy and F-type centres in the perovskite-type MgSiO_3 crystal. The equilibrium geometry of defects is obtained, confirming the importance of electrostatic interaction in determination of atomic shifts. The calculated relaxation energies due to the defect formation are between 8 and 10 eV, thus evidencing favourability in the occurrence of such defects. The wave functions describing both F~+ and F centres are rather diffuse and the point defects are not well localised within the oxygen vacancy region. The Δ SCF computed absorption energies due to the F-type centres fall well within the ultraviolet spectrum, between 136 and 254 nm for the F~+ centre and between 163 and 248 nm for the F centre.
机译:基于HartreeFock方法和周期超级电池模型进行了量子化学建模,以研究钙钛矿型MgSiO_3晶体中的氧空位和F型中心。获得了缺陷的平衡几何形状,证实了静电相互作用在确定原子位移中的重要性。由于缺陷形成而计算出的弛豫能量在8至10 eV之间,因此证明了此类缺陷的发生是有利的。描述F〜+和F中心的波函数相当分散,并且点缺陷不在氧空位区域内很好地定位。由F型中心引起的ΔSCF计算吸收能很好地落在紫外光谱内,对于F〜+中心在136至254 nm之间,对于F中心在163至248 nm之间。

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