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Electronic states on the surface of graphite

机译:石墨表面的电子态

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Graphite consists of graphene layers in an AB (Bernal) stacking arrangement. The introduction of defects can reduce the coupling between the top graphene layers and the bulk crystal producing new electronic states that reflect the degree of coupling. We employ low temperature high magnetic field scanning tunneling microscopy (STM) and spectroscopy (STS) to access these states and study their evolution with the degree of coupling. STS in magnetic field directly probes the dimensionality of electronic states. Thus two-dimensional states produce a discrete series of Landau levels while three-dimensional states form Landau bands providing a clear distinction between completely decoupled top layers and ones that are coupled to the substrate. We show that the completely decoupled layers are characterized by a single sequence of Landau levels with square-root dependence on field and level index indicative of massless Dirac fermions. In contrast weakly coupled bilayers produce special sequences reflecting the degree of coupling, and multilayers produce sequences reflecting the coexistence of massless and massive Dirac fermions. In addition we show that the graphite surface is soft and that an STM tip can be quite invasive when brought too close to the surface and that there is a characteristic tip-sample distance beyond which the effect of sample-tip interaction is negligible.
机译:石墨由AB(Bernal)堆叠排列的石墨烯层组成。缺陷的引入可以减少顶层石墨烯层与块状晶体之间的耦合,从而产生反映耦合程度的新电子态。我们采用低温高磁场扫描隧道显微镜(STM)和光谱(STS)来访问这些状态,并研究它们的耦合程度。磁场中的STS直接探测电子态的维数。因此,二维状态会产生一系列离散的Landau能级,而三维状态会形成Landau能带,从而在完全解耦的顶层和耦合到衬底的顶层之间提供明显的区别。我们表明,完全解耦的层的特征是具有单一的Landau能级序列,并且对场和能级指数表示无质量狄拉克费米子具有平方根依赖性。相反,弱耦合的双层产生反映耦合程度的特殊序列,而多层产生的序列反映无质量和大量狄拉克费米子的共存。此外,我们显示出石墨表面很柔软,并且当STM针尖离表面太近时STM针尖可能具有很强的侵入性,并且存在一个特征性的针尖-样品距离,在该距离之外,样品-针尖相互作用的影响可以忽略。

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