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New insights into subsurface imaging of carbon nanotubes in polymer composites via scanning electron microscopy

机译:通过扫描电子显微镜对聚合物复合材料中碳纳米管表面成像的新见解

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Despite many studies of subsurface imaging of carbon nanotube (CNT)-polymer composites via scanning electron microscopy (SEM), significant controversy exists concerning the imaging depth and contrast mechanisms. We studied CNT-polyimide composites and, by threedimensional reconstructions of captured stereo-pair images, determined that the maximum SEM imaging depth was typically hundreds of nanometers. The contrast mechanisms were investigated over a broad range of beam accelerating voltages from 0.3 to 30 kV, and ascribed to modulation by embedded CNTs of the effective secondary electron (SE) emission yield at the polymer surface. This modulation of the SE yield is due to non-uniform surface potential distribution resulting from current flows due to leakage and electron beam induced current. The importance of an external electric field on SEM subsurface imaging was also demonstrated. The insights gained from this study can be generally applied to SEM nondestructive subsurface imaging of conducting nanostructures embedded in dielectric matrices such as graphene-polymer composites, silicon-based single electron transistors, high resolution SEM overlay metrology or e-beam lithography, and have significant implications in nanotechnology.
机译:尽管通过扫描电子显微镜(SEM)对碳纳米管(CNT)-聚合物复合材料进行了地下成像研究,但有关成像深度和对比度机制仍存在重大争议。我们研究了CNT-聚酰亚胺复合材料,并通过对捕获的立体对图像进行三维重构,确定最大SEM成像深度通常为数百纳米。在从0.3到30 kV的大范围光束加速电压范围内研究了对比机理,归因于嵌入式CNT对聚合物表面有效二次电子(SE)发射产率的调制。 SE产率的这种调节归因于由于泄漏和电子束感应电流引起的电流流动而导致的不均匀表面电势分布。还证明了外部电场对SEM地下成像的重要性。从这项研究中获得的见解可以普遍应用于嵌入在电介质矩阵中的导电纳米结构的SEM无损表面成像,例如石墨烯-聚合物复合材料,硅基单电子晶体管,高分辨率SEM覆盖计量学或电子束光刻,并且具有重要意义。对纳米技术的影响。

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