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首页> 外文期刊>Biochemical and Biophysical Research Communications >Analyzing indirect secondary electron contrast of unstained bacteriophage T4 based on SEM images and Monte Carlo simulations.
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Analyzing indirect secondary electron contrast of unstained bacteriophage T4 based on SEM images and Monte Carlo simulations.

机译:基于SEM图像和蒙特卡洛模拟分析未染色噬菌体T4的间接二次电子对比度。

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摘要

The indirect secondary electron contrast (ISEC) condition of the scanning electron microscopy (SEM) produces high contrast detection with minimal damage of unstained biological samples mounted under a thin carbon film. The high contrast image is created by a secondary electron signal produced under the carbon film by a low acceleration voltage. Here, we show that ISEC condition is clearly able to detect unstained bacteriophage T4 under a thin carbon film (10-15 nm) by using high-resolution field emission (FE) SEM. The results show that FE-SEM provides higher resolution than thermionic emission SEM. Furthermore, we investigated the scattered electron area within the carbon film under ISEC conditions using Monte Carlo simulation. The simulations indicated that the image resolution difference is related to the scattering width in the carbon film and the electron beam spot size. Using ISEC conditions on unstained virus samples would produce low electronic damage, because the electron beam does not directlyirradiate the sample. In addition to the routine analysis, this method can be utilized for structural analysis of various biological samples like viruses, bacteria, and protein complexes.
机译:扫描电子显微镜(SEM)的间接二次电子对比度(ISEC)条件可产生高对比度检测,而对安装在薄碳膜下的未染色生物样品的损坏最小。高对比度图像是由碳膜下低加速电压产生的二次电子信号产生的。在这里,我们表明,通过使用高分辨率场发射(FE)SEM,ISEC条件显然能够在薄碳膜(10-15 nm)下检测出未染色的噬菌体T4。结果表明,FE-SEM比热电子发射SEM具有更高的分辨率。此外,我们使用蒙特卡洛模拟研究了在ISEC条件下碳膜内的散射电子区域。模拟表明,图像分辨率差异与碳膜中的散射宽度和电子束斑尺寸有关。在未染色的病毒样品上使用ISEC条件会产生较低的电子损伤,因为电子束不会直接照射样品。除了常规分析之外,该方法还可用于各种生物样品(如病毒,细菌和蛋白质复合物)的结构分析。

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