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首页> 外文期刊>Electrochimica Acta >Effects of supporting electrolytes on copper electroplating for filling through-hole
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Effects of supporting electrolytes on copper electroplating for filling through-hole

机译:辅助电解质对电镀铜以填充通孔的影响

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The filling of micron through-holes (THs) in a printed circuit board (PCB) by copper electroplating was investigated in this study. The role of supporting electrolytes, such as H_2SO_4, Na_2SO_4 and K_2SO_4, was explored using practical TH filling plating and linear-sweep voltammetry (LSV) analysis of plating solutions. The copper could selectively fill THs using one organic additive, namely, tetranitroblue tetrazolium chloride (TNBT), as an inhibitor. The inhibiting strength of TNBT depended on the supporting electrolytes. Although H_2SO_4 could enhance the inhibiting strength of TNBT, it also decreased the filling capability of the copper plating solution; Na_2SO_4 and K_2SO_4 did not enhance the inhibiting strength of TNBT but they increased the filling capability of the copper plating solution. Additionally, the protons could chemically interact with TNBT to form precipitate, whereas sodium and potassium ions did not easily interact with TNBT. The filling capability of the copper plating solution using Na_2SO_4 and K_2SO_4 as supporting electrolytes could be greatly improved by adding a small amount of bis(3-sulfopropyl)-disulfide (SPS) and poly(ethylene glycol) (PEG) with a molecular weight of 600.
机译:在这项研究中,研究了通过电镀铜填充印刷电路板(PCB)中的微米通孔(THs)。使用实用的TH填充镀层和镀层溶液的线性扫描伏安法(LSV)分析了支持电解质(例如H_2SO_4,Na_2SO_4和K_2SO_4)的作用。铜可以使用一种有机添加剂氯化四硝基蓝四唑鎓盐(TNBT)作为抑制剂选择性地填充TH。 TNBT的抑制强度取决于支持电解质。尽管H_2SO_4可以增强TNBT的抑制强度,但是它也降低了镀铜溶液的填充能力。 Na_2SO_4和K_2SO_4不能提高TNBT的抑制强度,但可以提高镀铜溶液的填充能力。此外,质子可以与TNBT化学相互作用形成沉淀,而钠和钾离子则不容易与TNBT相互作用。通过添加少量分子量为的双(3-磺丙基)-二硫化物(SPS)和聚(乙二醇)(PEG),可以极大地提高使用Na_2SO_4和K_2SO_4作为支持电解质的镀铜溶液的填充能力。 600

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