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Electronic Effects and Ring Strain Influences on the Electron Uptake by Selenium-Containing Bonds

机译:电子效应和环应变对含硒键电子吸收的影响

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The gas-phase electron attachment of thiaselena and diselena derivatives is investigated on model organic systems by ab initio calculations (level of theory MP2/DZP). Electronic contributions favor the one-electron addition on seleniumcontaining compounds, with adiabatic electron affinities of 0.03, 0.24, and 0.43 eV, respectively, for dimethyldisulfide, dimethylselenenylsulfide, and dimethyldiselenide. This ensures the possibility of an excess electron binding on OSeOSO and OSeOSeO linkages. The so-formed radical anionic intermediates present a three-electrons two-centers 2cO3e bond, whose nature is confirmed by Mulliken spin densities and NBO analysis. They are stable towards dissociation, with a low barrier evaluated between about 25–60 kJ/mol. Cyclization strongly enhances dichalcogen propensity to fix an excess electron. Adiabatic electron affinities of a series of 1,2-thiaselena-cycloalkanes and 1,2-diselena-cycloalkanes are positive and range from 0.24 to 1.30 eV. This can be traced back to the release of ring strain energy upon one-electron addition: this geometrical effect is nevertheless less marked than for disulfide analogs.
机译:通过从头算(理论水平MP2 / DZP),在模型有机体系上研究了硫代硒代和二硒代代衍生物的气相电子附着。电子贡献有利于含硒化合物的单电子加成,对二甲基二硫化物,二甲基硒烯基硫化物和二甲基二硒化物的绝热电子亲和力分别为0.03、0.24和0.43 eV。这确保了OSeOSO和OSeOSeO键上电子过量结合的可能性。如此形成的自由基阴离子中间体具有三电子两个中心的2cO3e键,其性质已通过Mulliken自旋密度和NBO分析得到证实。它们对解离稳定,估计在25-60 kJ / mol之间的低势垒。环化强烈地增强了二卤素固定过量电子的倾向。一系列的1,2-噻吩并环烷和1,2-二硒并环烷的绝热电子亲和力为正,范围为0.24至1.30 eV。这可以追溯到单电子添加时环应变能的释放:尽管如此,这种几何效应仍不如二硫键类似物明显。

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