Каталитическое　　плазменное　　анодирование　　кремния　　на　　поверхности　　с　　радиационными　　дефектами

摘要

A new method of high-quality silica filmsproduction by catalytic plasma anodizing of silicon with surfaceradiation defects introduced by preliminary ion implantation hasbeen proposed. It was shown, that in this way it is possible toreduce a temperature of the process down to 423 K as well as toincrease significantly the process rate and effectiveness. Effectof near the surface radiation defects on the kinetics of plasmaanodizing process is explained.