A High Performance RF LDMOS Power Transistor for Cellular Station Applications

摘要

A novel silicon RF lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure, applying a concept of differently doped offset, is proposed. The different offset structure consists of highly doped offset (HDO) and low doped offset (LDO). The HDO structure reduces the on-state resistance of the RF LDMOSFET. The LDO structure reduces the feedback capacitance of the RF LDMOSFET. The cut-off frequency of the proposed RF LDMOSFET is 10GHz. An RF amplifier with the proposed RF LDMOSFET accomplishes high output power (P{sub}(out) = 39.4dBm) and high power added efficiency (PAE = 44.7%) at 1.9GHz operating frequency with a 28V drain-source voltage.