Application of scanning probe microscope (SPM) for novel characterization of ferroelectric capacitor

摘要

Novel attempts have been made to analyze the electrical properties of the nanometer scaled devices in ULSI integrated circuits by utilizing SPM. Similar efforts have also been given in various ferroelectic application fields. This study tried to measure hysteresis loop of submicron size ferroleectric capacitors using SPM as a probe tip. In addition, some useful results such as the conductivity mapping of the crosss-sectional sample obtained 4M FRAM and direct polarization monitoring using KFM mode will be discussed thereby prospecting some possible future applications of SPM technology