An a-Si:H TFT Manufactured on an Ultra-Thin Mo Foil

摘要

We have studied the fabrication of hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) backplanes on flexible molybdenum (Mo) foils. An a-Si:H TFT manufactured on a 21-μm-thick Mo foil exhibited a field-effect mobility of 0.27 cm~2/Vs, a threshold voltage of 6.8 V and a sub-threshold slope of 1.2 V/decade. We found that the TFT performance on the foil was stable until a bending with a radius of 10 mm inward or outward.