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首页> 外文期刊>Journal of the European Ceramic Society >The study of BiC_xFe_(1-x)O_3 thin films synthesized by sol-gel technique
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The study of BiC_xFe_(1-x)O_3 thin films synthesized by sol-gel technique

机译:溶胶-凝胶法合成BiC_xFe_(1-x)O_3薄膜的研究

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Cr-doped bismuth ferrite (BiC_xFe_(1-x)O_3, BCFO) thin films were prepared by a sol-gel method with the value of x varying from 0 mol percent to 10 mol percent. The structures of the BCFO thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis was employed to represent the surface and cross-sectional morphologies of the thin films. Dielectric, electrical, ferroelectric and magnetic properties were measured by HP4294A, Keithley 4200, RT6000 and 6700 Magnet Controller at room temperature, respectively. The dielectric behaviour and insulation are improved in 3 percent Cr-doped BFO thin film which may be due to the reduced concentration of oxygen vacancies by 3 percent Cr doping.
机译:通过溶胶-凝胶法制备Cr掺杂的铋铁氧体(BiC_xFe_(1-x)O_3,BCFO)薄膜,x的值在0摩尔%至10摩尔%之间变化。 BCFO薄膜的结构通过X射线衍射(XRD)表征,并采用扫描电子显微镜(SEM)分析来表示薄膜的表面和截面形态。介电,电,铁电和磁性能分别通过HP4294A,吉时利4200,RT6000和6700磁体控制器在室温下进行测量。 3%Cr掺杂的BFO薄膜的介电性能和绝缘性得到了改善,这可能是由于3%Cr掺杂降低了氧空位的浓度。

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