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首页> 外文期刊>Journal of the European Ceramic Society >Intercalation of Al into MC (M = Ti, V, Cr)
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Intercalation of Al into MC (M = Ti, V, Cr)

机译:Al插入MC中(M = Ti,V,Cr)

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摘要

The energetics of point defects and twins in MC_x (x< 1, M=Ti, V, Cr, space group Fm3-bar m) was studied using density functional theory. Our goal is to contribute towards understanding the underlying atomic mechanisms enabling the Al intercalation into MC_x. As the valence electron concentration is increased by substituting Ti in TiC_x with V and further with Cr, the energy of formation for C vacancies is decreased. This may be understood based on the electronic structure. Upon increasing the valence electron concentration, the bonding becomes less ionic and more covalent. In covalent crystals, directional bonding may be rearranged and local relaxation is observed upon vacancy creation, while this gives rise to repulsive Coulomb forces in ionic crystals, and hence the energy of formation is expected to decrease as the valence electron concentration of M is increased. The difference between the energy of formation for an Al substitution at a C site and a C vacancy, the migration energy for Al, the point defect ordering energy, and the twin boundary energy may be overcome, for instance, during vapor phase condensation. These results may be of general relevance for the formation of MAX phases (space group P6_3/mmc) at low temperatures.
机译:利用密度泛函理论研究了MC_x(x <1,M = Ti,V,Cr,空间群Fm3-bar m)中点缺陷和孪晶的能级。我们的目标是有助于理解使Al嵌入MC_x的潜在原子机制。随着价电子浓度的增加,用Ti取代TiC_x中的Ti,用V进一步用Cr取代,C空位的形成能降低。可以基于电子结构来理解。随着价电子浓度的增加,键的离子性降低,共价键提高。在共价晶体中,方向键可能会重新排列,并且在产生空位时会观察到局部弛豫,而这会在离子晶体中引起排斥性库仑力,因此,随着M的价电子浓度增加,预期形成能降低。例如,在气相冷凝期间,可以克服C位处的Al取代的形成能和C空位的形成能,Al的迁移能,点缺陷有序能和孪晶边界能之间的差异。这些结果可能与低温下MAX相(空间群P6_3 / mmc)的形成有关。

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