首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >The effects of repetitive pulses parameters on the temperature evolution of a film on a substrate for plasma immersion ion implantation
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The effects of repetitive pulses parameters on the temperature evolution of a film on a substrate for plasma immersion ion implantation

机译:重复脉冲参数对等离子浸没离子注入基板上薄膜温度变化的影响

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摘要

The problem of heating a film on a semi-infinite substrate with repetitive high negative bias voltage pulses in contact with a plasma is solved by using the Laplace integral transform technique. The plasma is composed of a collisionless presheath and sheath on an electrically negative film, which partially reflects and secondarily emits ions and electrons. The heating rate of the film attributable to the plasma, the presheath and the sheath, is determined by kinetic analysis. This work proposes a semi-analytical model to calculate the temperature and temperature gradient evolutions inside the film and substrate and provides quantitative results applicable to the control of the temperature evolution. The predicted surface temperature of the film as a function of time is found to agree well with the experimental data. A minimum exits in the temperature gradient profile at a certain depth below the surface. As the heating period progresses, the point of minimum temperature gradient moves towards the solid bulk of the film. The temperature evolution rises periodically and the heat flux evolution oscillates near the vicinity of the surface of the film. In a region beyond a certain depth, the above-mentioned phenomena disappear, and the temperature and temperature gradient evolutions rise monotonically. The effects of the dimensionless pulse duty cycle and the bias voltage on the temperature and temperature gradient profiles could be demonstrated. The temperature at the front surface of the film increases linearly with the pulse parameters. The results show that the temperature and temperature gradient profiles inside the film and substrate are strongly dependent on the pulse parameters.
机译:通过使用拉普拉斯积分变换技术解决了在半无限大的基板上加热具有与等离子体接触的重复高负偏压脉冲的薄膜的问题。等离子体由在电负性薄膜上无碰撞的前护套和护套组成,该负性薄膜部分反射并二次发射离子和电子。通过动力学分析确定可归因于等离子体,前鞘和鞘的膜的加热速率。这项工作提出了一个半分析模型来计算膜和基材内部的温度和温度梯度演变,并提供适用于控制温度演变的定量结果。发现膜的预测表面温度随时间的变化与实验数据非常吻合。在表面以下一定深度的温度梯度曲线中存在最小值。随着加热时间的进行,最小温度梯度的点移向薄膜的固体。温度的变化周期性地升高,并且热通量的变化在膜表面附近振荡。在超过一定深度的区域中,上述现象消失,并且温度和温度梯度演变单调上升。可以证明无因次脉冲占空比和偏置电压对温度和温度梯度曲线的影响。薄膜前表面的温度随脉冲参数线性增加。结果表明,薄膜和基材内部的温度和温度梯度分布强烈依赖于脉冲参数。

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