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Stimulation of Vapor Nucleation on Perfect and Imperfect Hexagonal Lattice Surfaces

机译:完美和不完美的六角形晶格表面上的蒸汽成核刺激

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Monte Carlo simulations of water vapor nucleation on a perfect crystal surface and on a surface With defects are performed. Mass exchange with the vapor phase is modeled by using an open ensemble. Cluster-substrate interaction is described in terms of conventional atom-atom potentials. The Hamiltonian of the system includes expressions for electrostatic, polarization, exchange, and dispersion interactions. The Gibbs free energy and work of adsorption are calculated by Monte Carlo simulation in the bicanonical ensemble. The microscopic structure of nuclei is analyzed in terms of pair correlation functions. Periodic boundary conditions are used to simulate an infinite substrate surface. Molecule-substrate and molecule-molecule lone-range electrostatic interactions are calculated by summing the Fourier harmonics of the electrostatic potential. Dispersion interactions are calculated by direct summation over layers of unit cells. Nucleation on a surface with matching structure follows a layer-by-layer mechanism. The work of adsorption per molecule of a monolayer on the substrate surface has a maximum as a function of nucleus size. The steady rate of nucleation of islands of super-critical size is evaluated. The work of adsorption per molecule for layer-by-layer film growth is an oscillating function of cluster size. As a function of layer number. it has a minimum depending on the vapor pressure. The electric field generated by a microscopic surface protrusion destroys the layered structure of the condensate and eliminates tree-energy nucleation barriers. However, point lattice defects do not stimulate explosive nucleation.
机译:在完美的晶体表面和有缺陷的表面上进行水蒸气成核的蒙特卡洛模拟。通过使用开放式集合对与气相的质量交换进行建模。簇-底物的相互作用用常规的原子-原子势来描述。该系统的哈密顿量包括静电,极化,交换和色散相互作用的表达式。吉布斯自由能和吸附功是通过双经典合集中的蒙特卡罗模拟计算的。根据对相关函数分析原子核的微观结构。周期性边界条件用于模拟无限大的基材表面。分子-底物和分子-分子孤程静电相互作用是通过将静电势的傅立叶谐波相加来计算的。色散相互作用是通过对晶胞层进行直接求和来计算的。具有匹配结构的表面上的成核遵循逐层机制。底物表面上单分子单分子的吸附功随核大小的变化而最大。评估了超临界尺寸岛的稳定成核速率。每个分子用于逐层膜生长的吸附功是簇尺寸的振荡函数。作为层数的函数。它的最小值取决于蒸气压。微观表面突起产生的电场破坏了冷凝物的分层结构,并消除了树能量成核障碍。但是,点晶格缺陷不会刺激爆炸形核。

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