Formation of nanoelectrostatic quantum dots and two-dimensional subbands by the random potential of Mn donors in p-i-n resonant tunneling heterosystems

摘要

The influence of the random potential of Mn impurities in p-i-n resonant tunneling structures on the electronic spectrum has been studied. The possibility of the formation of zero-dimensional states in nanoelectrostatic quantum dots, as well as two-dimensional subbands in the region of GaAs quantum well, by the minima of this potential has been shown.