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首页> 外文期刊>Physical review, B >Real-space method for first-principles electron transport calculations: Self-energy terms of electrodes for large systems
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Real-space method for first-principles electron transport calculations: Self-energy terms of electrodes for large systems

机译:第一性原理电子传输计算的实空间方法:大型系统的电极自能项

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We present a fast and stable numerical technique to obtain the self-energy terms of electrodes for first-principles electron transport calculations. Although first-principles calculations based on the real-space finite-difference method are advantageous for execution on massively parallel computers, large-scale transport calculations are hampered by the computational cost and numerical instability of the computation of the self-energy terms. Using the orthogonal complement vectors of the space spanned by the generalized Bloch waves that actually contribute to transport phenomena, the computational accuracy of transport properties is significantly improved with a moderate computational cost. To demonstrate the efficiency of the present technique, the electron transport properties of a Stone-Wales (SW) defect in graphene and silicene are examined. The resonance scattering of the SW defect is observed in the conductance spectrum of silicene since the sigma* state of silicene lies near the Fermi energy. In addition, we found that one conduction channel is sensitive to a defect near the Fermi energy, while the other channel is hardly affected. This characteristic behavior of the conduction channels is interpreted in terms of the bonding network between the bilattices of the honeycomb structure in the formation of the SW defect. The present technique enables us to distinguish the different behaviors of the two conduction channels in graphene and silicene owing to its excellent accuracy.
机译:我们提出一种快速稳定的数值技术,以获取用于第一性原理电子传输计算的电极的自能项。尽管基于实空间有限差分法的第一性原理计算有利于在大规模并行计算机上执行,但自输能项的计算成本和数值不稳定性阻碍了大规模的输运计算。使用由实际上有助于传输现象的广义Bloch波跨越的空间的正交补矢量,以适度的计算成本显着提高了传输属性的计算精度。为了证明本技术的效率,研究了石墨烯和硅烯中Stone-Wales(SW)缺陷的电子传输特性。在硅的电导谱中观察到SW缺陷的共振散射,这是因为硅的σ状态位于费米能量附近。此外,我们发现一个传导通道对费米能量附近的缺陷敏感,而另一个传导通道几乎不受影响。传导通道的这种特征行为是通过在形成SW缺陷时蜂窝结构的双孔之间的键合网络来解释的。本技术由于其极好的准确性,使我们能够区分石墨烯和硅烯中两个导电通道的不同行为。

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