Influence Of Pulse Electromagnetic Fields On Integrated Memory Chips

L.N. Akhramovich; M.P. Gribskii; E. V. Grigorev; S.A. Zuev; V.V. Starostenko; G.I. Churyumov

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Influence Of Pulse Electromagnetic Fields On Integrated Memory Chips

机译：脉冲电磁场对集成存储芯片的影响

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摘要

The experimental procedure for immediately effecting pulse electromagnetic fields on present day memory chips is described. The threshold values of the fields are found, at which there are operating errors in the chips, degradation phenomena in microstructure elements of crystals, and catastrophic failures of chips.

机译：描述了立即在当今存储芯片上产生脉冲电磁场的实验过程。找到该场的阈值，在该阈值处存在芯片中的操作错误，晶体的微结构元件中的退化现象以及芯片的灾难性故障。

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来源
《Telecommunications and Radio Engineering 》 |2007年第19期| p.1799-1804| 共6页
作者
L.N. Akhramovich; M.P. Gribskii; E. V. Grigorev; S.A. Zuev; V.V. Starostenko; G.I. Churyumov;
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作者单位

Tavriya National University, Yaltinskaya 4, Simpheropol, 95022;

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收录信息美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术 ;
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Influence Of Pulse Electromagnetic Fields On Integrated Memory Chips

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