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Simulations of the chain length dependence of the melting mechanism in short-chain n-alkane monolayers on graphite

机译:石墨上短链正构烷烃单层熔化机理的链长依赖性模拟

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The melting transition in solid monolayers of a series of short-chained n-alkanes, n-octane (n-C8H18), n-decane (n-C10H22), and n-dodecane (n-C12H26) physisorbed onto the graphite basal plane are studied through use of molecular dynamics simulations. Utilizing previous experimental observations of the solid phase behavior of these monolayers, this study investigates the temperature dependence of the phases and phase transitions in these three monolayers during the solid-fluid phase transition, and compares the observed melting behavior to previous studies of hexane and butane monolayers. In particular, this study seems to indicate a greater dependence of the melting transition on the formation of gauche defects in the alkyl chains as the chain length is increased. In light of the previously proposed "footprint reduction" mechanism and variations where the formation of gauche defects are energetically negated, simulations seem to suggest that decane and dodecane monolayers are generally equally as dependent upon the formation of gauche defects for the melting transition to take place, whereas octane monolayers seem to have less dependence, but follow a trend that is established in previous studies of melting in butane and hexane monolayers. Also, the phase transition from a solid herringbone phase into an orientationally ordered "intermediate" phase is found to exhibit some differences as compared to a recent study of hexane monolayers, which may be interpreted as originating from the greater influence of gauche defects. Comparison to experimental melting temperatures is provided where possible, and applications involving thin film manipulation and lubrication is discussed. (c) 2005 Elsevier B.V. All rights reserved.
机译:一系列短链正构烷烃,正辛烷(n-C8H18),正癸烷(n-C10H22)和正十二烷(n-C12H26)的固体单层中的熔融转变物理吸附在石墨基面上通过使用分子动力学模拟进行研究。利用先前对这些单层固相行为的实验观察,本研究调查了固液相变过程中这三个单层的相和相变的温度依赖性,并将观察到的熔融行为与先前对己烷和丁烷的研究进行了比较。单层。特别地,该研究似乎表明,随着链长的增加,熔融转变对烷基链中薄纱缺陷形成的依赖性更大。鉴于先前提出的“减少足迹”的机理和各种变化,其中强烈消除了薄纱缺陷的形成,模拟似乎表明癸烷和十二烷单分子层通常均等地依赖于薄纱缺陷的形成,以进行熔融转变,而辛烷单层似乎没有那么多的依赖性,但是遵循了以前在丁烷和己烷单层中熔融的研究中确立的趋势。而且,与最近对己烷单层的研究相比,发现从固体人字形相到取向有序的“中间”相的相变表现出一些差异,这可以解释为源于薄纱缺陷的更大影响。尽可能提供与实验熔化温度的比较,并讨论涉及薄膜处理和润滑的应用。 (c)2005 Elsevier B.V.保留所有权利。

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