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Vapour phase formation of amino functionalised Si_3N_4 surfaces

机译:氨基官能化Si_3N_4表面的气相形成

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Self-assembled monolayer (SAM) formation of silanes on SiO_2 surfaces has been extensively studied. However, SAMs formed on silicon nitride (Si_3N_4) substrates have not been explored to the same level as SiO_2. even though they are of technological interest with a view to the chemical modification of micro-electromechanical systems (MEMS). Therefore, this article presents the formation and characterisation of 3-aminopropyltrimethoxysilane (APTMS) SAMs on Si_3N_4 substrates from solution phase and vapour phase, compared to the well characterised APTMS SAMs formed on SiO_2 surfaces. Contact angle, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and ellipsometric data indicate the formation of APTMS SAMs (0.55 nm ellipsometric thickness) after 60 min immersion of either SiO_2 or Si_3N_4 substrates in APTMS solution (0.5 mM in EtOH). By comparison Si_3N_4 substrates exposed to APTMS vapour, at 168 mbar for 60 min, result in the formation of the equivalent of a bi or trilayer of APTMS.
机译:在SiO_2表面上硅烷的自组装单层(SAM)形成已得到广泛研究。但是,尚未探索在氮化硅(Si_3N_4)衬底上形成的SAM与SiO_2处于同一水平。即使它们对微机电系统(MEMS)的化学修饰具有技术意义。因此,与在SiO_2表面上形成的特征明确的APTMS SAM相比,本文介绍了在Si_3N_4基板上从溶液相和气相形成3-氨基丙基三甲氧基硅烷(APTMS)SAMs的方法。接触角,原子力显微镜(AFM),X射线光电子能谱(XPS)和椭圆光度数据表明,将SiO_2或Si_3N_4基板浸入APTMS溶液(0.5 mM于)中60分钟后,形成了APTMS SAM(椭圆光度厚度为0.55 nm)。 EtOH)。相比之下,在168 mbar下暴露于APTMS蒸气的Si_3N_4基板60分钟,导致形成了等量的APTMS双层或三层。

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