机译:通过湿法沉积在特氟龙衬底上的锌薄膜的氧化锌纳米线的制备和表征
Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;
Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;
Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;
Physics Department, College of Science, Al Imam Mohammad Ibn Saud Islamic University, Riyadh, Saudi Arabia;
Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;
Department of Physics, College of Science, University of Bahrain, PO Box 32038, Bahrain;
ZnO; Nanowires; Wet oxidation; Photodetector; Response time; Recovery time;
机译:真空沉积锌热氧化制备ZnO薄膜的表征
机译:沉积在聚对苯二甲酸乙二醇酯基底上的透明导电ZnO:Al薄膜的制备与表征
机译:通过金属有机化学气相沉积法在Zn和O面ZnO衬底上生长的ZnO和Zn_(1-x)Cd_xO薄膜的特性
机译:原位氧化溅射Zn3N2制备p型ZnO纳米薄膜的制备与表征
机译:通过轧制溅射沉积工艺沉积在柔性玻璃基板上的氧化铟锌,氧化铟锡和钼薄膜的表征
机译:Zn薄膜在不同温度下的热氧化合成ZnO纳米线及其表征
机译:Zn薄膜在不同温度下的热氧化合成ZnO纳米线及其表征