首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 1-V 10.7-MHz switched-opamp bandpass /spl Sigma//spl Delta/ modulator using double-sampling finite-gain-compensation technique
【24h】

A 1-V 10.7-MHz switched-opamp bandpass /spl Sigma//spl Delta/ modulator using double-sampling finite-gain-compensation technique

机译:使用双采样有限增益补偿技术的1V 10.7 MHz开关运算带通/ spl Sigma // spl Delta /调制器

获取原文
获取原文并翻译 | 示例
           

摘要

A 1 V switched-capacitor (SC) bandpass sigma-delta (/spl Sigma//spl Delta/) modulator is realized using a high-speed switched-opamp (SO) technique with a sampling frequency of up to 50 MHz, which is improved ten times more than prior 1 V SO designs and comparable to the performance of the state-of-the-art SC circuits that operate at much higher supply voltages. On the system level, a fast-settling double-sampling SC biquadratic filter architecture is proposed to achieve high-speed operation. A low-voltage double-sampling finite-gain-compensation technique is employed to realize a high-resolution /spl Sigma//spl Delta/ modulator using only low-DC-gain opamps to maximize the speed and to reduce power dissipation. On the circuit level, a fast-switching methodology is proposed for the design of the switchable opamps to achieve a switching frequency up to 50 MHz. Implemented in a 0.35-/spl mu/m CMOS process (V/sub TP/=0.82 V and V/sub TN/=0.65 V) and at 1 V supply, the modulator achieves a measured peak signal-to-noise-and-distortion ratio (SNDR) of 42.3 dB at 10.7 MHz with a signal bandwidth of 200 kHz, while dissipating 12 mW and occupying a chip area of 1.3 mm/sup 2/.
机译:使用高速开关运算放大器(SO)技术以高达50 MHz的采样频率实现1 V开关电容器(SC)带通sigma-delta(/ spl Sigma // spl Delta /)调制器与先前的1 V SO设计相比,它的性能提高了十倍,并且可以与以更高的电源电压工作的最新SC电路的性能相媲美。在系统级别,提出了一种快速建立双采样SC双二次滤波器架构,以实现高速运行。低压双采样有限增益补偿技术用于仅使用低DC增益运算放大器来实现高分辨率/ spl Sigma // spl Delta /调制器,从而使速度最大化并降低功耗。在电路级,提出了一种快速切换方法,用于可切换运算放大器的设计,以实现高达50 MHz的切换频率。调制器以0.35- / spl mu / m CMOS工艺(V / sub TP / = 0.82 V和V / sub TN / = 0.65 V)实施并且在1 V电源下实现了测得的峰值信噪比和-失真比(SNDR)在10.7 MHz时为42.3 dB,信号带宽为200 kHz,而耗散12 mW的芯片面积为1.3 mm / sup 2 /。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号