首页> 外文期刊>Solid-State Circuits, IEEE Journal of >Low Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe Bipolar Technology
【24h】

Low Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe Bipolar Technology

机译:SiGe双极技术中用于毫米波成像的低功耗宽带收发器芯片组

获取原文
获取原文并翻译 | 示例
           

摘要

This paper presents a chipset aiming at high resolution imaging systems for real-time people screening applications operating near the W-band. The frequency of operation ranges from 70 GHz to 82 GHz for optimal image resolution and depth of focus. The frequency generation for both receiver and transmitter chips consists of a mixer based frequency quadrupler with an input amplifier requiring -20 dBm of input power. The receiver RFIC contains 4 channels including LO generation and distribution. The measured receiver conversion gain is 23 dB with a SSB NF around 10 dB over a wide frequency range from 70 GHz up to 82 GHz. The transmitter RFIC includes LO generation, distribution and 4 output amplifiers with an output power of more than 0 dBm in a frequency range from 70 GHz to 82 GHz. Both ICs are supplied from a single 3.3 V supply voltage and the power consumption is 180 mW/channel for the receiver and 145 mW/channel for the transmitter.
机译:本文提出了一种针对高分辨率成像系统的芯片组,用于在W波段附近运行的实时人员筛选应用。为了获得最佳图像分辨率和聚焦深度,工作频率范围为70 GHz至82 GHz。接收器和发射器芯片的频率产生都包括一个基于混频器的四倍频器,其输入放大器需要-20 dBm的输入功率。接收器RFIC包含4个通道,包括LO生成和分配。在70 GHz至82 GHz的宽频率范围内,SSB NF约为10 dB,测得的接收机转换增益为23 dB。发射器RFIC包括LO生成,分配和4个输出放大器,在70 GHz至82 GHz的频率范围内,其输出功率大于0 dBm。两种IC均由3.3 V单电源供电,接收器的功耗为180 mW /通道,发射器的功耗为145 mW /通道。

著录项

  • 来源
    《Solid-State Circuits, IEEE Journal of》 |2012年第5期|p.1175-1184|共10页
  • 作者

    Tiebout M.;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号