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A 1 W 104 dB SNR Filter-Less Fully-Digital Open-Loop Class D Audio Amplifier With EMI Reduction

机译:具有EMI降低功能的1 W 104 dB SNR滤波器少的全数字开环D类音频放大器

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摘要

This paper presents the design and implementation of a high-performance fully-digital PWM DAC and switching output stage which can drive a speaker in portable devices, including cellular phones. Thanks to the quaternary pulse-width modulation scheme, filter-less implementation are possible. A pre-modulation DSP algorithm eliminates the harmonic distortion inherent to the employed modulation process, and an oversampling noise shaper reduces the modulator clock speed to facilitate the hardware implementation while keeping high-fidelity quality. Radiated electromagnetic field emission of the class D amplifier is reduced thanks to a clock spreading technique with only a minor impact on audio performance characteristics. Clock jitter effects on the audio amplifier performance are presented, showing very low degradation for jitter value up to a few nanoseconds. The digital section works with a 1.2 V power supply voltage, while the output switching stage and its driver are supplied from a high-efficiency DC-DC converter either at 3.6 V or 5 V. An output power of 0.5 W at 3.6 V and 1 W at 5 V over an 8 $Omega$ load with efficiency (digital section included) of about 79% and 81%, respectively, has been achieved. The total harmonic distortion (THD) at maximum output level is about 0.2%, while the dynamic range is 104 dB A-weighted. The active area is about 0.94 mm$^{2}$ in a 0.13 $mu$m single-poly, five-metal, N-well digital CMOS technology with double-oxide option (0.5 $mu$m minimum length).
机译:本文介绍了一种高性能全数字PWM DAC和开关输出级的设计和实现,该级可以驱动便携式设备(包括蜂窝电话)中的扬声器。由于采用了四阶脉冲宽度调制方案,因此可以实现无滤波器的实现。预调制DSP算法消除了所采用的调制过程固有的谐波失真,过采样噪声整形器降低了调制器时钟速度,从而有助于硬件实现,同时保持高保真质量。得益于时钟扩展技术,D类放大器的辐射电磁场辐射得以降低,而对音频性能特性的影响却很小。提出了时钟抖动对音频放大器性能的影响,对于高达几纳秒的抖动值,显示出非常低的衰减。数字部分的电源电压为1.2 V,输出开关级及其驱动器由高效DC-DC转换器以3.6 V或5 V供电。在3.6 V和1 V时输出功率为0.5 W在8Ω负载下,在5V下的W功率(包括数字部分)的效率分别约为79%和81%。最大输出电平下的总谐波失真(THD)约为0.2%,而动态范围为104 dB A加权。在具有双氧化物选择的0.13μm单晶五金属N阱数字CMOS技术中,有效面积约为0.94 mm ^ {2} $(最小长度为0.5μm)。

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