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A 3.1 mW 8b 1.2 GS/s Single-Channel Asynchronous SAR ADC With Alternate Comparators for Enhanced Speed in 32 nm Digital SOI CMOS

机译:具有替代比较器的3.1 mW 8b 1.2 GS / s单通道异步SAR ADC,可在32 nm数字SOI CMOS中提高速度

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An 8b 1.2 GS/s single-channel Successive Approximation Register (SAR) ADC is implemented in 32 nm CMOS, achieving 39.3 dB SNDR and a Figure-of-Merit (FoM) of 34 fJ per conversion step. High-speed operation is achieved by converting each sample with two alternate comparators clocked asynchronously and a redundant capacitive DAC with constant common mode to improve the accuracy of the comparator. A low-power, clocked capacitive reference buffer is used, and fractional reference voltages are provided to reduce the number of unit capacitors in the capacitive DAC (CDAC). The ADC stacks the CDAC with the reference capacitor to reduce the area and enhance the settling speed. Background calibration of comparator offset is implemented. The ADC consumes 3.1 mW from a 1 V supply and occupies 0.0015 mm².
机译:在32 nm CMOS中实现了一个8b 1.2 GS / s单通道逐次逼近寄存器(SAR)ADC,实现了39.3 dB的SNDR和每转换步骤34 fJ的品质因数(FoM)。通过使用两个异步时钟交替的比较器和一个具有恒定共模模式的冗余电容DAC来转换每个采样,以提高比较器的精度,从而实现高速工作。使用了低功耗,时钟控制的电容式基准缓冲器,并提供了分数基准电压以减少电容式DAC(CDAC)中的单位电容器数量。 ADC将CDAC与参考电容器堆叠在一起,以减小面积并提高建立速度。比较器失调的背景校准得以实现。 ADC从1 V电源消耗的功率为3.1 mW,占地为0.0015mm²。

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