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首页> 外文期刊>Solid-State Circuits, IEEE Journal of >A Scalable, 2.9 mW, 1 Mb/s e-Textiles Body Area Network Transceiver With Remotely-Powered Nodes and Bi-Directional Data Communication
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A Scalable, 2.9 mW, 1 Mb/s e-Textiles Body Area Network Transceiver With Remotely-Powered Nodes and Bi-Directional Data Communication

机译:具有远程供电节点和双向数据通信的可扩展,2.9 mW,1 Mb / s电子纺织人体局域网收发器

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This paper presents transceivers and a wireless power delivery system for a Body-Area Network (BAN) that uses an e-textiles-based physical layer (PHY) capable of linking a diverse set of sensor nodes monitoring vital signs on the user's body. A central base station in the network controls power delivery and communication resource allotment for every node using a general-purpose on-chip Node Network Interface (NNI). The architecture of the network ensures fault-tolerance, reconfigurability and ease of use through a dual wireless-wireline topology. The nodes are powered at a peak end-to-end efficiency of 1.2% and can transmit measured data at a peak rate of 1 Mb/s. Modulation schemes for communication in both directions have been chosen and a Medium Access and Control (MAC) protocol has been designed and implemented on chip to reduce complexity at the power-constrained nodes, and move it to the base station. While transferring power to a single node at maximum efficiency, the base station consumes 2.9 mW power and the node recovers 34 µW, of which 14 µW is used to power the network interface circuits while the rest can be used to power signal acquisition circuitry. Fabricated in 0.18 µm CMOS technology, the base station and the NNI occupy 2.95 mm 2 and 1.46 mm 2 area, respectively.
机译:<?Pub Dtl?>本文介绍了用于人体区域网络(BAN)的收发器和无线电源传输系统,该系统使用基于电子纺织的物理层(PHY),该物理层能够链接监视生命体征的各种传感器节点集在使用者的身体上。网络中的中央基站使用通用的片上节点网络接口(NNI)控制每个节点的功率传输和通信资源分配。网络的体系结构通过双无线有线拓扑结构确保了容错能力,可重配置性和易用性。节点以1.2%的端到端峰值效率供电,并可以1 Mb / s的峰值速率传输测量数据。已经选择了用于双向通信的调制方案,并且已经在芯片上设计并实现了媒体访问和控制(MAC)协议,以降低功率受限节点的复杂度,并将其移至基站。在以最大效率将功率传输到单个节点时,基站消耗2.9 mW的功率,节点恢复34 µW,其中14 µW用于为网络接口电路供电,而其余的可用于为信号采集电路供电。采用0.18 µm CMOS技术制造的基站和NNI分别占据2.95 mm 2和1.46 mm 2的面积。

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