首页> 外文期刊>IEEE Journal of Solid-State Circuits >An FRAM-Based Nonvolatile Logic MCU SoC Exhibiting 100% Digital State Retention at ${rm VDD}=$ 0 V Achieving Zero Leakage With ${<}$ 400-ns Wakeup Time for ULP Applications
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An FRAM-Based Nonvolatile Logic MCU SoC Exhibiting 100% Digital State Retention at ${rm VDD}=$ 0 V Achieving Zero Leakage With ${<}$ 400-ns Wakeup Time for ULP Applications

机译:基于FRAM的非易失性逻辑MCU SoC,在$ {rm VDD} = $ 0 V时具有100%的数字状态保持能力,通过$ {<} $ 400-ns的唤醒时间为ULP应用实现零泄漏

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摘要

This paper presents a nonvolatile logic (NVL)-based 32-b microcontroller system-on-chip (SoC) that backs up its working state (all flip-flops) upon receiving a power interrupt, has zero leakage in sleep mode, and needs less than 400 ns to restore the system state upon power-up. Nonvolatile Fe-Cap-based mini-arrays backup the machine state and allow the chip to wake up instantly after a power cycle. Without NVL, a chip would either have to keep all flip-flops powered, resulting in high standby power, or waste energy and time rebooting after power-up. NVL allows systems to use leakier processes to achieve higher performance/lower dynamic power while still having zero leakage in the sleep mode. Optimized system, architecture, and circuit techniques are presented that make NVL practical by adding only 3.6% to the SoC area. Since nonvolatile elements are added to the SoC, reliability and testability have to be key features of the design. This is the first NVL SoC with measured NVL bitcell read signal margin data and extensive test and debug capabilities. The chip is fabricated in a commercial 130-nm low-leakage process and uses a single 1.5-V power supply.
机译:本文提出了一种基于非易失性逻辑(NVL)的32-b微控制器片上系统(SoC),该器件在接收到电源中断时可以备份其工作状态(所有触发器),在睡眠模式下具有零泄漏,并且需要小于400 ns即可在上电时恢复系统状态。基于非易失性Fe-Cap的微型阵列可备份机器状态,并允许芯片在重启后立即唤醒。如果没有NVL,芯片要么必须使所有触发器保持供电,从而导致高待机功耗,要么浪费能量并在加电后重新启动时间。 NVL允许系统使用更泄漏的过程来实现更高的性能/更低的动态功耗,同时在休眠模式下仍具有零泄漏。提出了优化的系统,体系结构和电路技术,这些技术使SoC面积仅增加3.6%,从而使NVL变得实用。由于非易失性元件已添加到SoC,因此可靠性和可测试性必须成为设计的关键特征。这是第一款具有测量的NVL位单元读取信号裕量数据以及广泛的测试和调试功能的NVL SoC。该芯片采用商业化的130nm低泄漏工艺制造,并使用单个1.5V电源。

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